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SB20100FCT

Part No SB20100FCT
Manufacturer Panjit
Catalog HOT - SALES and EOL Components (S)
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Manufacturer Panjit
Win Source Part Number 313581-SB20100FCT
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SB20100FCT CAD Model

Description

The SB20100FCT is a dual Schottky Barrier Rectifier manufactured by Panjit. It contains two Schottky diodes within a single package, typically configured as a common cathode. The "F" in the part number typically signifies an isolated or improved thermal package, such as a TO-220F, designed to enhance heat dissipation. It is designed for high-efficiency rectification and fast switching applications in power supplies, converters, and other high-frequency circuits requiring minimal power loss.

Applications:

  • Switching Mode Power Supplies (SMPS)
  • DC-DC Converters
  • High-Frequency Inverters
  • Freewheeling diodes in inductive loads
  • Polarity protection circuits

Features:

  • Dual Diode Configuration
  • Low Forward Voltage Drop
  • High Surge Current Capability
  • Fast Switching Speed
  • Isolated or Improved Thermal Package (TO-220F)

Benefits:

  • Increased Power Efficiency
  • Reduced Power Dissipation and Heat Generation
  • Compact Design, saving board space
  • Improved Thermal Performance, leading to higher reliability
  • Enhanced System Performance in High-Frequency Applications

Additional Details:

The SB20100FCT is typically available in a TO-220F or similar insulated package. Key specifications include a maximum repetitive peak reverse voltage (VRRM) of 100V, a maximum average forward rectified current (IF(AV)) of 20A (10A per diode), and a low maximum forward voltage drop (VF), typically around 0.82V. The operating temperature range is usually -55°C to +150°C. The dual-diode configuration allows for efficient full-wave rectification or can be paralleled for increased current capacity. The fast switching speed minimizes losses in high-frequency applications. The insulated package enhances thermal management, allowing for higher power dissipation. The Schottky barrier construction provides a lower forward voltage drop compared to standard silicon diodes, resulting in higher efficiency and reduced heat generation. The high surge current capability ensures robustness against transient voltage events.

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