The XN4601 is a PNP epitaxial planar silicon transistor manufactured by Panasonic. It is designed for low-frequency amplification and switching applications. This transistor features low collector saturation voltage and a high DC current gain, making it suitable for use in various electronic circuits.
Applications:
- Low-Frequency Amplification.
- Switching Circuits.
- Signal Processing.
- Driver Stages.
- General-Purpose Amplification.
Features:
- Low Collector Saturation Voltage.
- High DC Current Gain (hFE).
- Small Signal Amplification.
- Epitaxial Planar Silicon Structure.
- Pb-Free (RoHS Compliant).
Benefits:
- Efficient switching performance with low saturation voltage.
- High amplification capability for weak signals.
- Suitable for a wide range of general-purpose applications.
- Provides stable and reliable performance.
- Environmentally friendly.
Technical Specifications:
- Collector-Base Voltage (VCBO): -50 V
- Collector-Emitter Voltage (VCEO): -50 V
- Emitter-Base Voltage (VEBO): -5 V
- Collector Current (IC): -0.15 A
- Collector Power Dissipation (PC): 0.2 W
- DC Current Gain (hFE): 85 to 340
- Operating Junction Temperature (Tj): 150 °C
- Package: SOT-323
The XN4601 PNP transistor offers a reliable and cost-effective solution for low-frequency amplification and switching applications. Its low collector saturation voltage and high DC current gain ensure efficient performance in a variety of circuits. The small SOT-323 package makes it suitable for space-constrained applications. This transistor is commonly used in signal processing, driver stages, and general-purpose amplification circuits.
