The 2SD636-R, also known as 2SC1652MQ, is an NPN epitaxial silicon transistor manufactured by Panasonic. This transistor is designed for high-voltage switching and amplifier applications. It finds common use in power supplies, audio amplifiers, and general-purpose switching circuits.

Applications:

• Power supplies.
• Audio amplifiers.
• Switching regulators.
• General-purpose switching circuits.

Features:

• NPN Epitaxial Silicon Transistor.
• High voltage capability.
• High current gain.
• Low saturation voltage.

Benefits:

• Provides reliable switching performance in high-voltage applications.
• Enables efficient amplification in audio circuits.
• Suitable for driving moderate loads.
• Minimizes power loss during switching.

Additional Details:

The 2SD636-R is typically available in a TO-92 or similar through-hole package. Key parameters include collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PC). Consult the Panasonic datasheet for detailed specifications, including DC current gain (hFE), saturation voltage (VCE(sat)), and thermal characteristics.