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TIG008TS-TL-E

Part No TIG008TS-TL-E
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family IGBTs - Single
Manufacturer ON Semiconductor
Win Source Part Number 217039-TIG008TS-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TIG008TS-TL-E CAD Model

Description

The ON Semiconductor TIG008TS-TL-E is a high-performance, N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This MOSFET utilizes advanced trench technology to provide excellent RDS(on) and low gate charge, making it an ideal choice for power management tasks where energy efficiency is a priority.

Key Features:

  • Low On-Resistance: The TIG008TS-TL-E boasts an ultra-low on-resistance (RDS(on)), which significantly reduces conduction losses and improves overall efficiency in circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET can operate at higher frequencies, which is beneficial for applications such as DC-DC converters, motor drives, and other power switching tasks.
  • Low Gate Charge: The reduced gate charge (Qg) helps to minimize switching losses and allows for faster and more efficient switching performance.
  • Robust Thermal Performance: The TIG008TS-TL-E is designed to handle high temperatures, ensuring reliable operation even under thermal stress.
  • Small Package: Encapsulated in a compact SOP-8 package, this MOSFET is suitable for space-constrained applications, while still providing the power handling capabilities needed for demanding tasks.

Applications:

The versatility of the TIG008TS-TL-E MOSFET makes it suitable for a variety of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Control Circuits
  • Battery Management Systems
  • Load Switches
  • Power Management for Consumer Electronics

Specifications:

Some of the electrical characteristics of the TIG008TS-TL-E include:

Parameter Value Drain-to-Source Voltage (V<sub>DS) 30V Gate-to-Source Voltage (V<sub>GS) ±20V Continuous Drain Current (I<sub>D) 40A Pulsed Drain Current (I<sub>DM) 160A Power Dissipation (P<sub>D) 2.5W RDS(on) Max (@ V<sub>GS = 10V) 3.5mΩ Total Gate Charge (Q<sub>g) 14nC

In conclusion, the TIG008TS-TL-E from ON Semiconductor is a powerful, efficient, and versatile MOSFET that meets the demands of modern electronic devices and power systems. Its superior electrical characteristics ensure high performance in a wide array of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9314 $51.2270
135+ $0.7642 $103.1670
205+ $0.7403 $151.7615
280+ $0.7165 $200.6200
365+ $0.6926 $252.7990
485+ $0.6209 $301.1365
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,188 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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