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P6SMB33AT3G

Part No P6SMB33AT3G
Manufacturer ON Semiconductor
Catalog TVS - Diodes
Description TVS DIODE 28.2VWM 45.7VC SMB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Standard Package 1
Category Circuit Protection
Family TVS - Diodes
Series Automotive AEC-Q101
Packaging Reel
Type Zener
Unidirectional Channels 1
Voltage - Reverse Standoff (Typ) 28.2V
Voltage - Breakdown (Min) 31.4V
Voltage - Clamping (Max) @ Ipp 45.7V
Current - Peak Pulse (10/1000µs) 13.2A
Power - Peak Pulse 600W
Power Line Protection No
Applications Automotive
Capacitance @ Frequency 585pF @ 1MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package DO-214AA SMB
Manufacturer Device Package SMB
Catalog Automotive AEC-Q101 SMB Series
Win Source Part Number 061047-P6SMB33AT3G
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Communications & Networking, Computers & Computer Peripherals, Imaging, Video & Vision, Industrial
Ultra Librarian 3D Model Ultra Librarian P6SMB33AT3G CAD Model

Description

ON Semiconductor P6SMB33AT3G TVS Diode

The P6SMB33AT3G is a robust transient voltage suppressor (TVS) diode, designed by ON Semiconductor, to safeguard sensitive electronics from voltage spikes and transient events. This component is a part of ON Semiconductor's high-quality surge protection product line, tailored for applications requiring reliable and efficient overvoltage protection.

This TVS diode is characterized by its 600W peak pulse power capability with a 10/1000μs waveform, which makes it an ideal choice for absorbing high-energy transients. The P6SMB33AT3G is specifically designed to protect voltage-sensitive components which can be affected by transient phenomena such as lightning, inductive load switching, or electrostatic discharge (ESD).

Key Features

  • Stand-Off Voltage: The device has a stand-off voltage of 28.2V, which is the maximum voltage that can be applied over the diode without causing it to conduct in its avalanche breakdown mode.
  • Peak Pulse Power: It can withstand 600W peak pulse power dissipation for unidirectional devices, ensuring protection against high energy transients.
  • Fast Response Time: The diode offers a rapid response time, typically in the order of picoseconds, which is crucial for protecting against fast and damaging voltage spikes.
  • Low Leakage: The P6SMB33AT3G has a low leakage current, which improves energy efficiency and minimizes impact on the overall performance of the circuit.
  • Compact Package: The device comes in an SMB (DO-214AA) package, which is known for its small footprint, making it suitable for compact circuit designs.

Applications

The P6SMB33AT3G is versatile and can be used in a variety of applications, including:

  • Consumer Electronics
  • Automotive Systems
  • Industrial Equipment
  • Telecommunication Systems
  • Power Supply Protection

With its combination of high surge capability, fast response, and reliability, the P6SMB33AT3G from ON Semiconductor is an excellent choice for designers looking to enhance the durability and longevity of their electronic systems against transient voltages.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3596 $50.3440
340+ $0.2951 $100.3340
525+ $0.2859 $150.0975
725+ $0.2766 $200.5350
935+ $0.2674 $250.0190
1,255+ $0.2398 $300.9490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 673 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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