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NVJD4152PT1G

Part No NVJD4152PT1G
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description NVJD4152 - Dual P-Channel Trench
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 880mA (Ta)
Rds On (Max) @ Id, Vgs 260mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 20V
Power - Max 272mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Standard Package 1,924 pcs
Win Source Part Number 832974-NVJD4152PT1G
Ultra Librarian 3D Model Ultra Librarian NVJD4152PT1G CAD Model

Description

ON Semiconductor NVJD4152PT1G Product Overview

The NVJD4152PT1G is a high-performance, Power MOSFET designed by ON Semiconductor, a reputable leader in the field of energy-efficient innovations. This product is specifically engineered to meet the demanding requirements of modern electronic circuits, providing a combination of low on-resistance and high switching speeds. It is an ideal choice for a wide range of applications, including power management, load switching, and motor control in consumer, automotive, and industrial sectors.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance, which results in minimal power loss during operation and enhances overall efficiency.
  • High Switching Speed: With its fast switching capabilities, the NVJD4152PT1G is suitable for high-frequency applications, ensuring swift response times and reduced switching losses.
  • Dual N-Channel Configuration: This MOSFET comes in a dual N-channel configuration, allowing for compact designs and simplified circuit topology.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology is utilized to optimize the device for low gate charge and capacitance, providing improved performance in switching applications.
  • RoHS Compliant: The NVJD4152PT1G is compliant with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment, making it an environmentally responsible choice.

Applications

  • DC-DC Converters
  • Power Management Systems
  • Load Switching Circuits
  • Motor Control Modules
  • Automotive Electronics
  • LED Lighting Solutions

The NVJD4152PT1G is packaged in a compact, surface-mountable SOT-223 package, which is designed for space-constrained applications. It is capable of handling continuous drain currents, making it robust for high-power operations. The device's built-in thermal shutdown feature ensures safe operation by preventing thermal runaway and protecting the circuitry from overheating.

With its combination of efficiency, reliability, and versatility, the ON Semiconductor NVJD4152PT1G Power MOSFET is a top-tier component for designers looking to enhance the performance of their electronic designs while maintaining energy efficiency and thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1695 $50.0025
720+ $0.1391 $100.1520
1,115+ $0.1348 $150.3020
1,535+ $0.1304 $200.1640
1,985+ $0.1261 $250.3085
2,655+ $0.1130 $300.0150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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