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NVD3055L170T4G

Part No NVD3055L170T4G
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 60V 9A DPAK / Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 9A
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Maximum) at Id, Vgs 170mOhm at 4.5A, 5V
Vgs(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 10nC at 5V
Maximum Vgs ±15V
Input Capacitance (Ciss) (Maximum) at Vds 275pF at 25V
Power Dissipation (Maximum) 1.5W , 28.5W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812365-NVD3055L170T4G
Ultra Librarian 3D Model Ultra Librarian NVD3055L170T4G CAD Model

Description

ON Semiconductor NVD3055L170T4G: A Robust MOSFET for Efficient Power Management

The NVD3055L170T4G from ON Semiconductor is a cutting-edge power MOSFET designed to cater to a wide range of applications that demand high efficiency and reliability. Engineered with advanced technology, this MOSFET is an ideal choice for professionals seeking components for power management solutions in their electronic designs.

Key Features:

  • Low On-Resistance: The NVD3055L170T4G boasts a low on-resistance, which ensures minimal voltage drop across the device when conducting. This feature contributes to higher efficiency and lower heat dissipation during operation.
  • High Continuous Drain Current: With a continuous drain current of 17 A, this MOSFET can handle significant power without compromise, making it suitable for demanding applications.
  • Enhanced Gate Charge Performance: The optimized gate charge of the NVD3055L170T4G allows for faster switching speeds, which is vital for reducing switching losses in power conversion applications.
  • Robust Thermal Characteristics: The device is encapsulated in a DPAK package, which offers excellent thermal performance and helps in maintaining stability under varying operational conditions.
  • High Avalanche Energy Rating: It is designed to withstand high energy pulses in the avalanche and commutation modes, which ensures durability and long-term performance.

Applications:

The versatility of the NVD3055L170T4G makes it suitable for a plethora of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor control systems
  • Automotive applications
  • Switching regulators
  • Power management in portable devices

ON Semiconductor's commitment to innovation is reflected in the NVD3055L170T4G MOSFET, which is built to meet stringent industry standards for performance and reliability. Whether you're designing power systems for consumer electronics, automotive, or industrial applications, the NVD3055L170T4G from ON Semiconductor is a reliable choice that ensures your designs are power-efficient, robust, and ready for the challenges of modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6868 $51.5100
180+ $0.5636 $101.4480
275+ $0.5460 $150.1500
380+ $0.5283 $200.7540
490+ $0.5107 $250.2430
660+ $0.4579 $302.2140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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