The NTHD4502NT1 is a high-performance, dual P-Channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in power management and signal conditioning components. This MOSFET is designed to provide efficient power regulation with a low on-resistance and a high switching speed, making it an ideal choice for a variety of applications.

Key Features

• Device Type: Dual P-Channel Power MOSFET
• Package: Leadless SOT-23-6, offering a compact footprint for space-constrained applications.
• Drain-Source Voltage (V_DS): -20 V, providing a good balance between performance and robustness for most negative supply applications.
• Continuous Drain Current (I_D): -3.6 A, ensuring high current handling capability for demanding power loads.
• R_DS(on): Very low at 70 mΩ at V_GS = -4.5 V, minimizing on-state losses and improving efficiency.
• Gate Charge (Q_g): Reduced, which results in faster switching performance and reduced switching losses.

Applications

The NTHD4502NT1 is versatile and can be used in a wide range of applications, including:

• Power management circuits
• Load switching
• Battery management systems
• DC/DC converters
• Portable devices

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NTHD4502NT1 is built to ensure long-term performance and stability in your electronic designs. Its robust construction and stringent manufacturing controls make it a reliable choice for both commercial and industrial applications.

Environmental Compliance

In line with ON Semiconductor's commitment to environmental stewardship, the NTHD4502NT1 is RoHS compliant and free from environmentally hazardous substances. This makes it a safe and responsible choice for manufacturers looking to create eco-friendly products.