The NTHD3100CT1 from ON Semiconductor is a high-performance Power MOSFET designed for a wide range of applications requiring efficient power management and high reliability. This component is a testament to ON Semiconductor's commitment to providing energy-efficient solutions and innovative semiconductor technologies.
Key Features
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Low RDS(on): The device boasts a low on-resistance, reducing conduction losses and enhancing overall efficiency, which is crucial for power-sensitive applications.
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Dual P-Channel: It features a dual P-Channel configuration, making it suitable for applications that require a compact design without compromising on performance.
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High Switching Speed: The NTHD3100CT1 is designed for fast switching, enabling high-frequency operation and improved power efficiency.
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PowerTrench® Technology: This MOSFET incorporates ON Semiconductor's advanced PowerTrench® technology, which optimizes the device for low gate charge and low RDS(on) to minimize switching and conduction losses.
Applications
- Power Management in Portable Devices
- DC/DC Converters
- Battery Management Systems
- Load Switching
- Motor Control Circuits
Product Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDSS) |
20V |
| Continuous Drain Current (ID) |
3.6A |
| Power Dissipation (PD) |
1.25W |
| Package |
ChipFET |
The NTHD3100CT1 is available in a compact ChipFET package, which is ideal for space-constrained applications. Its robust design ensures reliable operation even under challenging conditions. This ON Semiconductor MOSFET is a perfect choice for designers looking to enhance system power efficiency and performance.