The ON Semiconductor NTH4L028N170M1 is an advanced N-channel MOSFET designed to meet the high-efficiency and high-density power requirements of modern electronic applications. This device is part of ON Semiconductor's portfolio of power management solutions, providing a combination of low on-resistance and high switching speeds.

Key Features

• High Current Capacity: With a continuous drain current of up to 70 A, the NTH4L028N170M1 is capable of handling high-power applications with ease.
• Low On-Resistance: Featuring an extremely low on-resistance of 2.8 mΩ, this MOSFET ensures minimal power loss and improved efficiency during operation.
• High-Speed Switching: The fast switching performance of this device is ideal for high-frequency power conversion systems.
• Enhanced Thermal Performance: The NTH4L028N170M1 is designed with an optimized package for superior thermal performance, ensuring reliability even under high-temperature operating conditions.
• Robust Gate Oxide: The device's gate oxide is engineered to withstand high voltage levels, contributing to the longevity and durability of the MOSFET.

Applications

The ON Semiconductor NTH4L028N170M1 is versatile and can be used in a variety of applications. It is particularly suited for power supply circuits, DC-DC converters, motor drives, and other power-intensive applications where efficiency is crucial. Its robust design also makes it suitable for automotive applications and industrial power systems.

Package and Quality

The MOSFET is housed in a Pb-free, Halogen-free, and RoHS compliant package, reflecting ON Semiconductor's commitment to environmental sustainability. The device is also characterized for operation from -55°C to +175°C, ensuring performance across a wide range of temperatures.

With its superior performance and reliability, the ON Semiconductor NTH4L028N170M1 N-Channel MOSFET is an excellent choice for designers looking to optimize their power management systems.