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NSVMBD770DW1T1G

Part No NSVMBD770DW1T1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 70V 100MA SC88 / Diode Schottky 70 V 100mA Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer onsemi
Packaging Reel - TR
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 70 V
Current - Average Rectified (Io) 100mA
Voltage - Forward (Vf) (Max) @ If 500 mV @ 1 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 200 nA @ 35 V
Capacitance @ Vr, F 1pF @ 20V, 1MHz
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number NSVMBD770
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Standard Package 3,000
Win Source Part Number 1325583-NSVMBD770DW1T1G
Ultra Librarian 3D Model Ultra Librarian NSVMBD770DW1T1G CAD Model

Description

Introducing the NSVMBD770DW1T1G Dual N-Channel MOSFET by ON Semiconductor

The NSVMBD770DW1T1G from ON Semiconductor is a state-of-the-art dual N-Channel MOSFET designed for high-efficiency power management tasks. This compact and reliable component is an ideal solution for a wide range of applications, including load switch, power conversion, and motor control in the automotive and industrial sectors.

Key Features

  • Low On-Resistance: The MOSFET boasts an extremely low on-resistance, which enhances its efficiency by minimizing power loss during operation.
  • Dual N-Channel Configuration: Its dual N-Channel design allows for the integration of two independent MOSFETs in a single package, saving space and simplifying circuit design.
  • High-Temperature Performance: Engineered to withstand high temperatures, the NSVMBD770DW1T1G operates reliably in environments with demanding thermal conditions.
  • PowerTrench® Technology: Incorporating ON Semiconductor's proprietary PowerTrench® technology, this MOSFET ensures optimal power density and performance while maintaining a low profile.
  • Automotive Grade: Meeting the stringent requirements of the automotive industry, this device is AEC-Q101 qualified, ensuring robustness and quality for automotive applications.

Specifications

  • Voltage Rating: The device supports a drain-source voltage (Vds) of up to 30V, providing a wide operating range for various circuit designs.
  • Current Capacity: It can handle continuous drain currents (Id) up to 7.7A, facilitating the management of high current loads.
  • Package: Enclosed in a compact SOT-363 package, the NSVMBD770DW1T1G is designed for space-constrained applications without sacrificing performance.

Applications

The versatility of the NSVMBD770DW1T1G makes it suitable for a variety of applications, including:

  • Automotive systems such as engine control units, power distribution modules, and LED lighting.
  • DC-DC converters where efficiency and space are critical.
  • Power management for portable electronics, where battery life is paramount.
  • Motor control circuits in industrial automation systems.

With its combination of efficiency, reliability, and compact form factor, the NSVMBD770DW1T1G from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
495+ $0.1018 $50.3910
1,200+ $0.0836 $100.3200
1,855+ $0.0810 $150.2550
2,555+ $0.0784 $200.3120
3,305+ $0.0757 $250.1885
4,420+ $0.0679 $300.1180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 495 pcs
Order Increment : 1 pcs
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