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NSV20200LT1G

Part No NSV20200LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 180mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 250 @ 500mA, 2V
Maximum Power Dissipation 460mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1083655-NSV20200LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSV20200LT1G CAD Model

Description

The NSV20200LT1G from ON Semiconductor is a cutting-edge Schottky Barrier Diode designed to offer efficient voltage rectification with low forward voltage drop and high surge current capability. This component is a perfect fit for high-frequency applications requiring a compact footprint and superior thermal performance.

Key Features:

  • Low Forward Voltage: This diode provides a low forward voltage drop, which enhances the overall efficiency of the application by reducing power loss during operation.
  • High Surge Current Capability: The NSV20200LT1G can handle high surge currents, making it suitable for applications that experience transient overcurrent conditions.
  • Fast Switching Speed: With its fast switching characteristics, this diode is ideal for high-frequency circuits, contributing to better performance and lower energy consumption.
  • Power Dissipation: It has a power dissipation of 1.25 W, which helps in managing the thermal aspects of circuit design.
  • Low Leakage Current: The device exhibits a low leakage current that ensures minimal power wastage when the diode is in the off state.
  • Temperature Range: It operates within a broad junction temperature range of -55°C to +150°C, which allows for use in harsh environments.

Applications:

The NSV20200LT1G is suitable for a variety of applications, including:

  • DC/DC Converters
  • Power Supply Management
  • Automotive Applications
  • Reverse Voltage and Current Protection
  • Switching Power Supplies
  • Freewheeling Diodes

Package and Quality:

The diode comes in a small surface-mount package (SOD-123), which is ideal for space-constrained applications. It is also AEC-Q101 qualified, ensuring reliability and performance standards for automotive applications. The NSV20200LT1G is provided in a Pb-free, RoHS-compliant package, reflecting ON Semiconductor's commitment to environmental sustainability.

Conclusion:

The NSV20200LT1G Schottky Barrier Diode from ON Semiconductor represents a blend of efficiency, reliability, and compact design. Its robust features make it a go-to choice for engineers looking to enhance the performance of their power management systems, particularly in automotive and high-frequency applications.

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