The NSR10T406MX2WT5G is a high-performance N-Channel MOSFET from ON Semiconductor, designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are intended to meet the demands of modern electronic circuits that require low power consumption and minimal heat generation.
Key Features
- Low On-Resistance: The device boasts an exceptionally low on-resistance (RDS(on)), which ensures minimal power loss during operation and enhances overall efficiency.
- High Switching Speed: Fast switching capabilities enable the MOSFET to operate effectively in circuits that require quick transitions, such as power supplies and converters.
- Low Threshold Voltage: A low gate threshold voltage allows for the MOSFET to be driven at lower voltages, making it suitable for low-voltage applications.
- Small Footprint: The compact SOT-923 package is designed for space-constrained applications, providing powerful performance in a tiny form factor.
- Robust Thermal Performance: With excellent thermal characteristics, the NSR10T406MX2WT5G is capable of maintaining stability and performance even under high temperature conditions.
Applications
The NSR10T406MX2WT5G is ideal for a variety of applications, including:
- Power Management Circuits
- DC/DC Converters
- Battery Powered Systems
- Load Switches
- Portable Electronic Devices
- Motor Control Systems
Technical Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDSS) |
40V |
| Continuous Drain Current (ID) |
1.06A |
| Power Dissipation (PD) |
200mW |
| RDS(on) |
155mΩ @ VGS = 4.5V |
| Operating Temperature Range |
-55°C to +150°C |
The NSR10T406MX2WT5G from ON Semiconductor represents a blend of efficiency, compactness, and robust performance, making it an excellent choice for engineers looking to optimize their power-sensitive designs.