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NVH4L060N065SC1

Part No NVH4L060N065SC1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description SIC MOS TO247-4L 650V
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1204008-NVH4L060N065SC1
Manufacturer onsemi
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series Automotive, AEC-Q101
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Ultra Librarian 3D Model Ultra Librarian NVH4L060N065SC1 CAD Model

Description

ON Semiconductor NVH4L060N065SC1 MOSFET Overview

The NVH4L060N065SC1 is a high-performance N-Channel MOSFET developed by ON Semiconductor, designed to cater to a wide range of power applications. This device is part of ON Semiconductor's cutting-edge silicon carbide (SiC) MOSFETs, which are known for their exceptional efficiency, reliability, and thermal performance. The NVH4L060N065SC1 is an ideal choice for applications requiring high power density and energy savings.

Key Features and Benefits

  • Low On-Resistance (RDS(on)): The device offers a very low on-resistance of 60 mΩ, which minimizes conduction losses and improves overall efficiency.
  • High Breakdown Voltage: With a breakdown voltage of 650V, the NVH4L060N065SC1 provides a robust buffer against voltage spikes and surges, making it suitable for high voltage applications.
  • High-Speed Switching: The fast switching capabilities of this SiC MOSFET allow for reduced switching losses and improved performance in high-frequency power converters and inverters.
  • Reduced Parasitics: The package design has been optimized to reduce parasitic inductances and capacitances, which enhances the switching performance and reduces EMI concerns.
  • High-Temperature Operation: Capable of operating at high junction temperatures (TJ) up to 175°C, the NVH4L060N065SC1 is suitable for demanding thermal environments.

Applications

The NVH4L060N065SC1 MOSFET is versatile and can be used in a variety of applications, including:

  • Power supply units (PSUs)
  • Electric vehicle (EV) chargers
  • Solar inverters and photovoltaic (PV) systems
  • Uninterruptible power supplies (UPS)
  • High-performance computing and data center power solutions
  • Industrial motor drives and welding equipment

Package and Environmental Compliance

The NVH4L060N065SC1 comes in a TO-247-3L package, which is known for its high power dissipation and ease of mounting. Additionally, ON Semiconductor is committed to environmental sustainability, and the NVH4L060N065SC1 is RoHS compliant, ensuring it adheres to the latest environmental regulations concerning hazardous substances.

In summary, the NVH4L060N065SC1 from ON Semiconductor is a state-of-the-art SiC MOSFET that offers exceptional performance and efficiency for a range of high power applications. Its robust design and advanced features make it a top choice for engineers looking to optimize their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $18.2689 $54.8067
7+ $14.9899 $104.9293
11+ $14.5215 $159.7365
15+ $14.0530 $210.7950
19+ $13.5846 $258.1074
25+ $12.1793 $304.4825
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Availability: 110 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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