The NSR0170P2T5G is a state-of-the-art P-Channel Mosfet designed and manufactured by ON Semiconductor, a leader in energy efficient innovations. This Mosfet is part of the company's extensive portfolio of semiconductor components that are engineered to provide high performance and reliability for a wide range of electronic applications.
Key Features
- Low Threshold Voltage: The device boasts a low threshold voltage, which makes it suitable for low voltage applications and ensures efficient operation at low gate voltages.
- High Power Dissipation: With a power dissipation of 1.25 W, this Mosfet can handle a substantial amount of energy without compromising its performance, making it ideal for power-intensive tasks.
- Small Package Size: The NSR0170P2T5G comes in a compact SOT-723 package, which is perfect for space-constrained applications while still delivering robust performance.
- Low On-Resistance: The device features a low on-resistance of 170 mOhms at a gate drive of 4.5V, contributing to its high efficiency and reduced power losses during operation.
Applications
The NSR0170P2T5G is versatile and can be used in a variety of applications, including:
- Load switch
- Power management
- Battery management systems
- Portable devices
- DC/DC converters
Specifications
| Parameter |
Value |
| Configuration |
Single |
| Channel Mode |
Enhancement |
| Channel Type |
P-Channel |
| Drain-Source Breakdown Voltage |
-20 V |
| Gate-Source Voltage - Vgs |
±8 V |
| Continuous Drain Current - Id |
-1 A |
| Power Dissipation |
1.25 W |
| Rds On - Max @ Id, Vgs |
170 mOhms @ -1 A, -4.5 V |
With its combination of low power consumption, high efficiency, and compact design, the NSR0170P2T5G is an excellent choice for designers looking to optimize their power management solutions.