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NSD914XV2T1G

Part No NSD914XV2T1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 100V 200MA SOD523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1V @ 10mA
Reverse Recovery Time (trr) 4ns
Current - Reverse Leakage @ Vr 5μA @ 75V
Capacitance @ Vr, F 4pF @ 0V, 1MHz
Mounting SMD (SMT)
Case / Package SOD-523
Operating Temperature - Junction -55°C to 150°C
Win Source Part Number 025692-NSD914XV2T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSD914XV2T1G CAD Model

Description

The NSD914XV2T1G is a high-performance, low-signal, NPN bipolar transistor from ON Semiconductor, designed to meet the needs of a wide range of electronic applications. This versatile component is well-suited for applications requiring low noise and high gain, making it an excellent choice for audio amplifiers, signal processing, and other sensitive analog circuitry.

Key Features

  • High Gain Bandwidth Product: With a transition frequency (fT) of 8 GHz, the NSD914XV2T1G is capable of operating at high frequencies, making it suitable for RF and high-speed signal amplification.
  • Low Noise Figure: The device boasts an impressive low noise figure, minimizing the amount of unwanted noise introduced into electronic circuits.
  • Low Capacitance: The low capacitance of the transistor enables faster switching speeds and better performance in high-frequency applications.
  • Surface Mount Package: The transistor comes in a small SOT-23 surface-mount package, which is ideal for space-constrained applications and allows for efficient automated assembly processes.

Electrical Characteristics

ON Semiconductor's NSD914XV2T1G features a collector-emitter voltage (VCEO) of 12 V, a collector current (IC) of 50 mA, and a power dissipation (PD) of 225 mW. Its DC current gain (hFE) is specified at a value of 70 to 400, ensuring consistent performance across a range of operating conditions.

Applications

The NSD914XV2T1G is suitable for a variety of applications, including:

  • Audio Amplifiers
  • Signal Processing Circuits
  • Active Filter Stages
  • Low Noise RF Amplification
  • Oscillator Circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NSD914XV2T1G is no exception. It is manufactured to rigorous standards, ensuring high reliability and performance consistency. This makes it a trusted choice for both commercial and industrial applications where component reliability is critical.

Environmental Considerations

The NSD914XV2T1G is a RoHS-compliant component, adhering to environmental regulations that restrict the use of hazardous substances in electronic equipment. This commitment to environmental sustainability makes it suitable for use in a wide range of products marketed globally.

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Pricing & Ordering

Quantity Unit Price Ext. Price
850+ $0.0590 $50.1500
1,810+ $0.0553 $100.0930
2,810+ $0.0534 $150.0540
4,025+ $0.0497 $200.0425
5,235+ $0.0478 $250.2330
6,540+ $0.0459 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 72,000 pieces
MOQ: 850 pcs
Order Increment : 1 pcs
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