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NS6A13AT3G

Part No NS6A13AT3G
Manufacturer ON Semiconductor
Catalog TVS - Diodes
Description TVS DIODE 13VWM 21.5VC 6TDFN / 21.5V Clamp 27.9A Ipp Tvs Diode Surface Mount 6-TDFN-EP (3x3)
Sample
Rohs State rohs
ECAD Module
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Category Circuit Protection>TVS - Diodes
Mfr onsemi
Package Bulk
Type Zener
Unidirectional Channels 1
Voltage - Reverse Standoff (Typ) 13V
Voltage - Breakdown (Min) 14.4V
Voltage - Clamping (Max) @ Ipp 21.5V
Current - Peak Pulse (10/1000µs) 27.9A
Power - Peak Pulse 600W
Power Line Protection No
Applications Automotive, Telecom
Capacitance @ Frequency 1160pF @ 1MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-WDFN Exposed Pad
Supplier Device Package 6-TDFN-EP (3x3)
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.10.0050
Other Names ONSONSNS6A13AT3G,2156-NS6A13AT3G
Standard Package 5,000
Win Source Part Number 982275-NS6A13AT3G
Ultra Librarian 3D Model Ultra Librarian NS6A13AT3G CAD Model

Description

The ON Semiconductor NS6A13AT3G is a high-performance, P-Channel Power MOSFET designed for a variety of applications that demand efficient power management and reliability. This device is particularly suitable for portable electronics, where energy efficiency is paramount, as well as for load switch and battery protection circuits.

Key Features

  • Voltage Rating: The NS6A13AT3G operates at a drain-source voltage (VDS) of -30V, making it ideal for systems with a nominal voltage of 24V or lower.
  • Current Capacity: With a continuous drain current (ID) of -1.2A, this MOSFET can handle moderate power loads efficiently.
  • Low On-Resistance: The device boasts a low RDS(on) of 300 mΩ at VGS = -4.5V, which translates to reduced conduction losses and improved overall efficiency.
  • High-Speed Switching: Fast switching capabilities are essential for power efficiency, and the NS6A13AT3G excels in this area, ensuring minimal power loss during state changes.
  • Thermal Management: Encased in a SOT-23 package, the MOSFET is designed for optimal heat dissipation, maintaining stability and performance even under high-load conditions.
  • Gate Charge: The device has a low total gate charge (Qg), which contributes to its high-speed switching performance.
  • ESD Protected: Electrostatic discharge protection is built-in, safeguarding the MOSFET against sudden voltage spikes that could otherwise cause damage.

Applications

The NS6A13AT3G is versatile and can be utilized in a variety of applications, including:

  • Portable Electronics: Smartphones, Tablets, and Laptops
  • Power Management Circuits
  • Battery-Powered Systems
  • Load Switches
  • DC/DC Converters
  • Motor Control Circuits

Environmental and Regulatory Compliance

The NS6A13AT3G is compliant with RoHS (Restriction of Hazardous Substances), ensuring that it meets global environmental standards and is free from harmful substances. ON Semiconductor is committed to providing environmentally friendly solutions that meet the demands of an eco-conscious market.

With its combination of efficiency, reliability, and environmental compliance, the ON Semiconductor NS6A13AT3G is an excellent choice for designers and engineers seeking a high-quality P-Channel MOSFET for their power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 117,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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