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NGTB40N120SWG

Part No NGTB40N120SWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 40A 1200V TO-247
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Power - Max 535 W
Switching Energy 3.4mJ (on), 1.1mJ (off)
Input Type Standard
Gate Charge 313 nC
Td (on/off) @ 25°C 116ns/286ns
Test Condition 600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 240 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB40
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648470-NGTB40N120SWG
Ultra Librarian 3D Model Ultra Librarian NGTB40N120SWG CAD Model

Description

ON Semiconductor's NGTB40N120SWG IGBT

The NGTB40N120SWG is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is tailored for high-performance applications that require fast switching, high efficiency, and reliability. The NGTB40N120SWG is part of ON Semiconductor's extensive IGBT portfolio, which is known for its exceptional quality and performance in a wide range of applications.

Key Features

  • High Current Capability: The NGTB40N120SWG is capable of handling continuous currents up to 40A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage rating of 1200V, this IGBT can be used in systems that require high voltage operation.
  • Low On-State Voltage Drop (VCE(sat)): The device has a low saturation voltage, which enhances its efficiency by minimizing conduction losses.
  • Fast Switching Speed: The NGTB40N120SWG is designed for fast switching applications, which is essential for reducing switching losses and improving overall system efficiency.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged diode with a soft recovery profile reduces electromagnetic interference (EMI) and simplifies circuit design.
  • Robustness: The device is built to withstand rugged conditions and offers a high level of robustness, ensuring reliability and a long operational life.

Applications

The NGTB40N120SWG is ideal for a variety of power applications, including but not limited to:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Induction Heating
  • Motor Drives
  • High-Frequency Converters

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NGTB40N120SWG IGBT is no exception, as it is designed to meet stringent industry standards. Its robust construction ensures that it can operate reliably in extreme conditions and under significant electrical stress. This makes the NGTB40N120SWG a go-to component for engineers looking to develop systems with high durability and long service life.

With its combination of high efficiency, fast switching, and reliability, the NGTB40N120SWG from ON Semiconductor is an excellent choice for designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.3686 $50.2116
15+ $6.8666 $102.9990
23+ $6.6520 $152.9960
32+ $6.4374 $205.9968
41+ $6.2228 $255.1348
54+ $5.5791 $301.2714
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,490 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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