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NGTB35N65FL2WG

Part No NGTB35N65FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH/FS 650V 70A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 70 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A
Power - Max 300 W
Switching Energy 840µJ (on), 280µJ (off)
Input Type Standard
Gate Charge 125 nC
Td (on/off) @ 25°C 72ns/132ns
Test Condition 400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr) 68 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB35
Standard Package 30 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648467-NGTB35N65FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTB35N65FL2WG CAD Model

Description

ON Semiconductor NGTB35N65FL2WG IGBT Overview

The ON Semiconductor NGTB35N65FL2WG is a high-performance insulated gate bipolar transistor (IGBT) designed to deliver efficient and reliable power conversion in a wide range of applications. This IGBT is part of ON Semiconductor's advanced power technology, offering enhanced features that cater to the demands of modern electronic systems.

Key Features

  • Voltage & Current: The NGTB35N65FL2WG is rated for a collector-emitter voltage of 650V, with a continuous collector current of 35A at 25°C. This ensures that the device can handle high-power applications with ease.
  • Low On-Resistance: With a low on-state voltage drop due to its optimized saturation voltage, the device provides efficient conduction, reducing power losses and improving overall system efficiency.
  • Fast Switching: The IGBT features fast switching characteristics, which minimizes switching losses and allows for high-frequency operation, making it suitable for applications such as inverters and converters.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery diode, which provides protection against reverse voltage transients and reduces component count in the circuit design.

Applications

The NGTB35N65FL2WG is versatile and can be used in a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Induction Heating Systems
  • Solar Inverters
  • Motor Drives
  • High-Frequency Switching Power Supplies

Reliability & Performance

ON Semiconductor's commitment to quality ensures that the NGTB35N65FL2WG IGBT delivers consistent performance and reliability. It is designed to withstand rugged operating conditions while maintaining low thermal resistance for better heat dissipation. The device is also characterized by a tight parameter distribution, which provides a predictable and uniform performance across various devices.

Environmental Compliance

The NGTB35N65FL2WG is manufactured with eco-friendly materials and complies with RoHS and Halogen-Free standards, making it a suitable choice for environmentally conscious applications.

In summary, the NGTB35N65FL2WG from ON Semiconductor is a powerful IGBT solution that offers a blend of efficiency, speed, and reliability, making it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.8243 $53.0673
26+ $3.9584 $102.9184
40+ $3.8347 $153.3880
54+ $3.7110 $200.3940
70+ $3.5873 $251.1110
94+ $3.2162 $302.3228
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,976 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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