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NGTB20N120IHLWG

Part No NGTB20N120IHLWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 40A 192W TO247-3 / IGBT 1200 V 40 A 192 W Through Hole TO-247-3
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Power - Max 192 W
Switching Energy 700µJ (off)
Input Type Standard
Gate Charge 200 nC
Td (on/off) @ 25°C -/235ns
Test Condition 600V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB20
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 929120-NGTB20N120IHLWG
Ultra Librarian 3D Model Ultra Librarian NGTB20N120IHLWG CAD Model

Description

ON Semiconductor NGTB20N120IHLWG IGBT

The ON Semiconductor NGTB20N120IHLWG is a high-performance insulated-gate bipolar transistor (IGBT) that is designed to cater to a wide array of power electronics applications. This IGBT is part of ON Semiconductor's renowned portfolio of energy-efficient devices, which are engineered to enhance system reliability, improve energy efficiency, and reduce the overall environmental impact of electronic products.

The NGTB20N120IHLWG boasts a robust and durable design with a collector-emitter voltage (Vce) of 1200V and a continuous collector current (Ic) of 40A at 25°C. This makes it an excellent choice for applications requiring high voltage and current handling capabilities, such as motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems.

One of the key features of this IGBT is its low on-state voltage drop (Vce(on)) which contributes to its high efficiency. This characteristic ensures minimal power loss during operation, leading to less heat generation and a reduced need for complex cooling systems. The device also includes a co-packaged free-wheeling diode, which provides additional protection during switching events and contributes to the simplification of circuit designs.

The NGTB20N120IHLWG is designed with a positive temperature coefficient, which facilitates parallel operation and helps manage thermal stability. This feature is particularly useful in high-power applications where multiple IGBTs are used in parallel to handle larger currents.

For ease of integration, this IGBT comes in a TO-247 package, which is widely recognized for its excellent thermal performance and mechanical robustness. The package's industry-standard footprint ensures compatibility with a broad range of PCB layouts and simplifies the design-in process for engineers.

In summary, the ON Semiconductor NGTB20N120IHLWG IGBT is a state-of-the-art semiconductor device that offers a combination of high efficiency, reliability, and versatility. It stands out as an ideal solution for designers looking to optimize their power electronic systems in terms of performance and cost-effectiveness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.8110 $61.2990
21+ $5.5890 $117.3690
33+ $5.4135 $178.6455
45+ $5.2391 $235.7595
58+ $5.0647 $293.7526
77+ $4.5403 $349.6031
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,810 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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