The NGTB15N120LWG is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to offer high efficiency and fast switching performance in a variety of power applications. It is particularly well-suited for use in motor drives, uninterruptible power supplies (UPS), solar inverters, and other high-efficiency power management systems.

Key Features

• High Current Capability: The NGTB15N120LWG can handle a continuous collector current of up to 15A, making it suitable for high power applications.
• High Voltage Rating: With a collector-emitter voltage (Vce) rating of 1200V, this IGBT can be used in systems that require high voltage operation.
• Low On-Resistance: The device features a low on-state voltage drop due to its optimized saturation voltage, contributing to its high efficiency.
• Fast Switching Speed: The IGBT's fast switching characteristics minimize switching losses and improve overall system performance.
• Co-Packaged Free Wheeling Diode: It comes with an integrated fast recovery diode, which is essential for efficient switching and protection against reverse voltage transients.

Technical Specifications

Package and Reliability

The NGTB15N120LWG is housed in a TO-247 package, which is known for its high thermal performance and reliability. The robust design ensures a long operational life and stable performance even under harsh conditions.

Environmental Compliance

ON Semiconductor is committed to environmental sustainability. The NGTB15N120LWG is manufactured with eco-friendly materials and is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring minimal environmental impact.