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NGTB10N60R2DT4G

Part No NGTB10N60R2DT4G
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 40 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Power - Max 72 W
Switching Energy 412µJ (on), 140µJ (off)
Input Type Standard
Gate Charge 53 nC
Td (on/off) @ 25°C 48ns/120ns
Test Condition 300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr) 90 ns
Temperature Range - Operating 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NGTB10
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648451-NGTB10N60R2DT4G
Ultra Librarian 3D Model Ultra Librarian NGTB10N60R2DT4G CAD Model

Description

Product Overview: NGTB10N60R2DT4G

The NGTB10N60R2DT4G is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, a leading figure in the semiconductor industry. This IGBT is designed to offer high efficiency and fast switching performance in a wide range of applications, including inverters, converters, and motor drives. It is a perfect choice for designers looking for a device that combines the ease of control of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor.

Key Features

  • Current Rating: The NGTB10N60R2DT4G has a continuous collector current of 10A, making it suitable for moderate to high-power applications.
  • Voltage Rating: With a collector-emitter voltage (Vce) of 600V, it is designed for high-voltage circuits, providing a good margin for spikes and transients.
  • High Efficiency: The device has a low on-state voltage drop due to its trench IGBT technology, resulting in lower conduction losses and improved overall efficiency.
  • Fast Switching: It features a fast switching speed to minimize transition losses and enhance performance in high-frequency operations.
  • Co-Packaged Free Wheeling Diode: The inclusion of a soft recovery anti-parallel diode reduces EMI and switching losses, which is critical for high-speed switching applications.
  • Robustness: The NGTB10N60R2DT4G is designed with a rugged, self-limiting short-circuit capability for better reliability and longevity.

Applications

This IGBT is versatile and can be used in a variety of power applications. Some of the common applications include:

  • AC and DC motor controls
  • Power inverters for renewable energy sources like solar panels and wind turbines
  • Uninterruptible power supplies (UPS)
  • Switch-mode power supplies (SMPS)
  • Induction heating and welding equipment

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NGTB10N60R2DT4G is no exception and is built to meet stringent standards, ensuring reliability and performance in demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8461 $59.2270
170+ $0.6943 $118.0310
260+ $0.6726 $174.8760
355+ $0.6509 $231.0695
460+ $0.6292 $289.4320
615+ $0.5641 $346.9215
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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