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NGD18N40ACLBT4G

Part No NGD18N40ACLBT4G
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 430V 15A 115W DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - IGBTs - Single
Manufacturer ON Semiconductor
Packaging Reel(TR)
Voltage - Collector Emitter Breakdown (Max) 430V
Current - Collector (Ic) (Max) 15A
Current - Collector Pulsed (Icm) 50A
Vce(on) (Max) @ Vge, Ic 2.5V @ 4V, 15A
Power - Max 115W
Input Type Logic
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Style SMD/SMT
Manufacturer Device Package DPAK-3
Win Source Part Number 122214-NGD18N40ACLBT4G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian NGD18N40ACLBT4G CAD Model

Description

ON Semiconductor NGD18N40ACLBT4G IGBT

The ON Semiconductor NGD18N40ACLBT4G is a high-performance insulated-gate bipolar transistor (IGBT) designed for a wide range of applications requiring efficient and robust power management solutions. This IGBT is part of ON Semiconductor's energy-efficient portfolio and is engineered to provide a combination of fast switching, low on-state voltage, and high thermal performance.

Key Features

  • Voltage and Current Ratings: The NGD18N40ACLBT4G is rated for a collector-emitter voltage (Vce) of 400V, which makes it suitable for mid-range power applications. It also has a continuous collector current (Ic) rating of 18A at 25°C, ensuring reliable operation in a variety of circuits.
  • Low On-State Voltage: This IGBT features a low on-state voltage drop, which enhances its efficiency by minimizing conduction losses. This characteristic is particularly beneficial in applications where power efficiency is critical.
  • High-Speed Switching: With its fast switching capabilities, the NGD18N40ACLBT4G is capable of operating at high frequencies, which is advantageous for applications such as switching power supplies and motor control where swift response times are necessary.
  • Co-Packaged Free-Wheeling Diode: The device includes a co-packaged fast and soft recovery anti-parallel diode, which provides protection against reverse voltage and reduces switching noise, improving overall system reliability and performance.
  • Temperature Performance: The NGD18N40ACLBT4G is designed to perform reliably over a wide temperature range, making it suitable for industrial environments and applications with varying thermal conditions.

Applications

  • AC and DC motor drives
  • Power inverters and converters
  • Uninterruptible power supplies (UPS)
  • Induction heating
  • Switching power supplies

The ON Semiconductor NGD18N40ACLBT4G IGBT is a versatile and efficient solution for designers looking to improve power management in their electronic systems. Its robust design and superior electrical characteristics make it an ideal choice for a multitude of applications requiring high-performance switching and power control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0367 $62.2020
140+ $0.8507 $119.0980
215+ $0.8240 $177.1600
290+ $0.7974 $231.2460
375+ $0.7708 $289.0500
505+ $0.6912 $349.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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