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NCP5304DR2G

Part No NCP5304DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC DRIVER HI/LOW SIDE HV 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Supply Voltage - Operating 10 V to 20 V
Logic Voltage - VIL, VIH 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise and Fall Time 85ns, 35ns
Temperature Range - Operating -40°C to 125°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 060024-NCP5304DR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NCP5304DR2G CAD Model

Description

ON Semiconductor NCP5304DR2G: High-Efficiency Dual MOSFET Driver

The NCP5304DR2G, from ON Semiconductor, is a high-performance dual MOSFET driver designed to efficiently drive two power MOSFETs in a synchronous buck converter topology. This component is particularly suitable for high-density power applications where space is at a premium and high efficiency is a must. The NCP5304DR2G is a critical part of power management solutions, providing the necessary drive voltage to power MOSFET gates with precision and speed.

With its dual outputs, the NCP5304DR2G can control both the high-side and low-side MOSFETs in a synchronous rectification configuration. This enables the reduction of switching losses and improves overall system efficiency, which is vital for applications such as computing, telecommunications, and networking where power efficiency is crucial. The driver operates over a wide supply voltage range, accommodating various system designs and ensuring compatibility with a broad range of MOSFETs.

One of the standout features of the NCP5304DR2G is its adaptive non-overlapping gate drive, which helps to prevent shoot-through currents by ensuring that the high-side and low-side MOSFETs are not conducting simultaneously. This feature not only protects the MOSFETs from damage but also contributes to the reliable and stable operation of the power supply.

The NCP5304DR2G is also equipped with an integrated bootstrap diode, which simplifies the circuit design by reducing the number of external components required. This integrated feature helps to minimize the PCB footprint and can lead to cost savings in the overall design. Additionally, the driver's high peak current capability ensures that the MOSFETs are switched rapidly, reducing transition losses and further enhancing efficiency.

ON Semiconductor has packaged the NCP5304DR2G in a space-saving 8-pin SOIC package, which is RoHS compliant and designed for surface mount technology (SMT), making it easy to incorporate into modern PCB designs. The compact form factor, combined with its robust drive capabilities, makes the NCP5304DR2G a preferred choice for engineers looking to optimize their power supply designs for both performance and size.

In summary, the NCP5304DR2G from ON Semiconductor is an advanced dual MOSFET driver that offers high efficiency, reduced component count, and reliability for synchronous buck converter applications in a variety of power-intensive industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4396 $64.7820
100+ $1.1813 $118.1300
155+ $1.1444 $177.3820
210+ $1.1074 $232.5540
270+ $1.0706 $289.0620
365+ $0.9598 $350.3270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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