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NCP5104DR2G

Part No NCP5104DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC DRIVER HALF BRIDGE HV 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Supply Voltage - Operating 10 V to 20 V
Logic Voltage - VIL, VIH 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise and Fall Time 85ns, 35ns
Temperature Range - Operating -40°C to 125°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 025059-NCP5104DR2G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NCP5104DR2G CAD Model

Description

ON Semiconductor NCP5104DR2G High Voltage High and Low Side Driver

The NCP5104DR2G is a high-performance, high voltage gate driver specifically engineered to drive both the high-side and low-side N-Channel MOSFETs in a half-bridge configuration. Manufactured by ON Semiconductor, a leader in power and signal management, this driver is designed to provide robust and efficient performance in a wide array of applications. With its advanced features, the NCP5104DR2G is an ideal solution for high power applications that require reliable and efficient switching.

Key Features:

  • High Voltage Range: Capable of handling voltages up to 600V, this driver is suitable for a variety of demanding applications, including power supplies and motor control systems.
  • High Current Drive: The NCP5104DR2G can source up to 350 mA and sink up to 650 mA, providing strong drive capability for the connected MOSFETs.
  • Independent Inputs: Separate logic inputs for the high side and low side ensure flexible and precise control over the switching actions.
  • Under-Voltage Lockout (UVLO): Both the high-side and low-side drivers feature UVLO protection to ensure the device operates only when the supply voltage is sufficient, enhancing the system's reliability.
  • dV/dt Immunity: A robust immunity to high dV/dt rates prevents false triggering, making the NCP5104DR2G a stable and reliable choice for fast-switching environments.
  • Cross-Conduction Prevention: Built-in dead-time helps to avoid simultaneous conduction of both drivers, reducing the risk of damaging the MOSFETs or the load.

Applications:

The versatility of the NCP5104DR2G makes it suitable for a broad range of high voltage applications, including but not limited to:

  • AC-DC and DC-DC converters
  • Resonant mode power supplies
  • Motor control systems
  • Inverters for renewable energy sources
  • Induction heating
  • UPS systems

In summary, the ON Semiconductor NCP5104DR2G is a durable and efficient solution for driving high-side and low-side power MOSFETs. Its high voltage capability, combined with powerful drive currents and protective features, make it an excellent choice for engineers seeking performance and reliability in their power conversion and management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0026 $50.1300
125+ $0.8226 $102.8250
190+ $0.7969 $151.4110
260+ $0.7712 $200.5120
340+ $0.7455 $253.4700
450+ $0.6684 $300.7800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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