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MUN5213DW1T1

Part No MUN5213DW1T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS BRT NPN DUAL 50V SOT363
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number MUN52
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 832203-MUN5213DW1T1
Ultra Librarian 3D Model Ultra Librarian MUN5213DW1T1 CAD Model

Description

Introducing the MUN5213DW1T1 from ON Semiconductor

The MUN5213DW1T1 is a cutting-edge bipolar transistor from ON Semiconductor, a leader in the semiconductor industry. This product is specifically designed to meet the rigorous demands of modern electronic circuits, providing high performance and reliability in a compact package.

Key Features

  • Dual Bipolar Transistors: The MUN5213DW1T1 contains two PNP transistors, which are matched for high precision performance. This makes it ideal for current mirror and differential amplifier applications, where matching characteristics are crucial for circuit stability and accuracy.
  • SOT-363 Package: Enclosed in a small SOT-363 surface-mount package, the MUN5213DW1T1 is designed for space-constrained applications. It offers a minimal footprint on the PCB, allowing for high-density circuit designs without sacrificing performance.
  • High Current Gain: The device boasts a high current gain (hFE), ensuring efficient current amplification in your circuit. This feature is particularly beneficial in applications requiring high input impedance and low output impedance.
  • Low Collector-Emitter Saturation Voltage: With a low VCE(sat), the MUN5213DW1T1 ensures lower power dissipation during operation, leading to improved energy efficiency and reduced thermal stress on the device.

Applications

The MUN5213DW1T1 is versatile and can be used in various electronic applications, including:

  • Signal processing
  • Analog circuitry
  • Power management systems
  • Audio amplifiers
  • Telecommunication circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MUN5213DW1T1 is no exception. The device undergoes rigorous testing to ensure it meets the highest standards of performance and reliability. With ON Semiconductor's expertise in semiconductor technology, you can expect the MUN5213DW1T1 to deliver consistent and dependable results in your electronic designs.

Whether you are developing a complex audio system or a simple power management module, the MUN5213DW1T1 from ON Semiconductor is an excellent choice for your bipolar transistor needs. Its combination of precision, efficiency, and compact design makes it a valuable component in any electronic engineer's toolkit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,715+ $0.0292 $50.0780
4,170+ $0.0240 $100.0800
6,440+ $0.0233 $150.0520
8,890+ $0.0225 $200.0250
11,470+ $0.0218 $250.0460
15,385+ $0.0195 $300.0075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 1715 pcs
Order Increment : 1 pcs
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