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MC34152DR2G

Part No MC34152DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC MOSFET DRIVER DUAL HS 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 6.1 V to 18 V
Logic Voltage - VIL, VIH 0.8V, 2.6V
Current - Peak Output (Source, Sink) 1.5A, 1.5A
Input Type Non-Inverting
Rise and Fall Time 36ns, 32ns
Temperature Range - Operating 0°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 022687-MC34152DR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MC34152DR2G CAD Model

Description

ON Semiconductor MC34152DR2G Dual Non-Inverting High-Speed MOSFET Driver

The ON Semiconductor MC34152DR2G is a high-performance dual non-inverting MOSFET driver designed for use in a wide range of applications that require efficient power management and high-speed switching. This device is particularly well-suited for driving capacitive loads, such as the gates of power MOSFETs, with minimal delay and maximum efficiency.

Constructed with Bipolar/CMOS/DMOS (BCD) technology, the MC34152DR2G provides robust output drive capability and high-speed performance. Each driver is capable of delivering peak currents up to 1.5A, making it an excellent choice for heavy-duty operations. The driver operates over a wide voltage range from 4.5V to 18V, offering great flexibility for various system voltages and ensuring compatibility with a broad array of MOSFETs.

The MC34152DR2G features a dual non-inverting configuration, which means that the output signal is in phase with the input signal. This is particularly useful in applications where signal polarity needs to be maintained. The device also includes built-in protection features such as under-voltage lockout (UVLO), which ensures that the driver operates only when the supply voltage is within the specified range, thus protecting the MOSFETs from potential damage due to insufficient gate voltage.

With its fast propagation delays and rise/fall times typically under 25ns, the MC34152DR2G is capable of high-frequency operation, which is essential for power supply and conversion systems, motor control circuits, and other applications requiring rapid switching. The device is offered in an SOIC-8 package, which provides a compact footprint while allowing for adequate thermal performance.

For designers and engineers looking for a reliable and efficient solution to drive power MOSFETs or IGBTs, the ON Semiconductor MC34152DR2G stands out as a versatile and powerful component. Its combination of high-speed operation, strong drive capability, and protective features make it an integral part of any power management system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6438 $57.5330
75+ $1.3488 $101.1600
115+ $1.3066 $150.2590
160+ $1.2645 $202.3200
205+ $1.2223 $250.5715
275+ $1.0959 $301.3725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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