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ISL9R460S3ST

Part No ISL9R460S3ST
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description 4A, 600V Stealth™ Diode | DIODE GEN PURP 600V 4A TO263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 600V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Maximum) at If 2.4V at 4A
Speed Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 22ns
Current - Reverse Leakage at Vr 100μA at 600V
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Operating Temperature - Junction -55°C ~ 175°C
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 1190566-ISL9R460S3ST
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ISL9R460S3ST CAD Model

Description

ON Semiconductor ISL9R460S3ST Power MOSFET

The ISL9R460S3ST is a robust and efficient power MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This power MOSFET is part of ON Semiconductor's extensive portfolio of electronic components that cater to a wide range of applications, from automotive systems to industrial power management.

This particular MOSFET is recognized for its high-speed switching capabilities and energy-efficient performance. The ISL9R460S3ST is designed to handle a drain-to-source voltage (V<sub>DS) of up to 600V, which makes it suitable for high-voltage applications. The device is also capable of continuous drain currents (I<sub>D) as high as 4.6A, ensuring that it can manage significant power levels for a variety of electronic circuits.

One of the notable features of the ISL9R460S3ST is its low on-state resistance (R<sub>DS(on)), which minimizes power loss during operation and enhances overall system efficiency. This characteristic is particularly important in applications where energy conservation and heat management are critical. Additionally, the device's fast intrinsic diode with a soft recovery profile contributes to reduced electromagnetic interference (EMI), which is beneficial in noise-sensitive applications.

The package of the ISL9R460S3ST is designed with ease of integration in mind. It comes in a surface-mount D2PAK (TO-263) package that is compatible with standard PCB manufacturing processes, allowing for straightforward assembly and soldering onto circuit boards. The package is also known for its durability and thermal performance, ensuring that the MOSFET can operate reliably even under harsh conditions.

Applications for the ISL9R460S3ST include switch mode power supplies (SMPS), lighting ballasts, DC-DC converters, and other power conversion systems that require high efficiency and reliability. With its combination of high-voltage capability, low power loss, and fast switching speeds, the ISL9R460S3ST from ON Semiconductor is an excellent choice for designers looking to optimize their power management solutions.

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