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ISL9K18120G3

Part No ISL9K18120G3
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description 18A, 1200V Stealth™ Dual Diode | DIODE ARRAY GP 1200V 18A TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Diode Configuration 1 Pair Common Cathode
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 1200V
Current - Average Rectified (Io) (per Diode) 18A
Voltage - Forward (Vf) (Maximum) at If 3.3V at 18A
Speed Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 70ns
Current - Reverse Leakage at Vr 100μA at 1200V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Manufacturer Pack Quantity 300
MSL Level 1 (Unlimited)
Win Source Part Number 1190549-ISL9K18120G3
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ISL9K18120G3 CAD Model

Description

ON Semiconductor ISL9K18120G3 Product Overview

The ISL9K18120G3 is a high-performance, fast-switching N-Channel Power MOSFET designed and manufactured by ON Semiconductor. This device is part of the renowned ISL9K series, known for their efficiency and reliability in a wide range of power applications. The ISL9K18120G3 is engineered to deliver optimal performance in high-speed switching applications, including power supplies, converters, and motor drives.

Key Features

  • High-Speed Switching: The ISL9K18120G3 is optimized for fast switching, reducing transition losses and improving overall efficiency.
  • Low On-Resistance: With an extremely low on-resistance (RDS(on)), this MOSFET minimizes conduction losses, which is critical for high-efficiency power designs.
  • High Voltage Capability: The device is rated for a maximum drain-to-source voltage (VDSS) of 1200V, making it suitable for high-voltage applications.
  • Robust Thermal Performance: The ISL9K18120G3 features a maximum junction temperature of 150°C, ensuring stable operation under a wide range of thermal conditions.
  • TO-3P Package: The device is available in a TO-3P package, which provides excellent power dissipation and heat management capabilities.

Applications

The ISL9K18120G3 is ideal for a variety of applications where high efficiency, fast switching, and reliability are of paramount importance. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Drives
  • Power Inverter Systems
  • Lighting Systems

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The ISL9K18120G3 is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. Customers can trust this MOSFET to perform consistently in demanding environments.

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