The HMBT2222AXLT1G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed for general-purpose amplifier and switching applications, offering a robust and versatile component for a wide range of electronic circuits.

Key Features

• Transistor Type: NPN
• Package / Case: SOT-23 (TO-236)
• DC Current Gain (hFE): 100 at 10mA, 10V
• Collector-Emitter Voltage VCEO Max: 40 V
• Collector-Base Voltage VCBO: 75 V
• Emitter-Base Voltage VEBO: 6 V
• Continuous Collector Current (IC): 600 mA
• Power Dissipation (Pd): 225 mW
• Operating Junction Temperature (Tj): -55°C to +150°C
• RoHS Compliant: Yes

Applications

The HMBT2222AXLT1G is ideal for a variety of applications due to its high current gain and low saturation voltage. It is commonly used in:

• Signal Amplification
• Switching and Linear Amplification
• Power Management
• Motor Control
• Consumer Electronics
• Telecommunications
• Computing Devices

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The HMBT2222AXLT1G is manufactured with the highest standards, ensuring reliability and performance for critical applications. It is also supported by ON Semiconductor's technical documentation and customer support.

Environmental Information

The HMBT2222AXLT1G is RoHS compliant, indicating that it is free from hazardous materials commonly restricted in electronic components. ON Semiconductor's dedication to environmental responsibility ensures that this product is suitable for use in eco-conscious designs.