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HGTP12N60C3

Part No HGTP12N60C3
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 24A, 600V, UFS Series N-Channel IGBTs | IGBT 600V 24A 104W TO220AB
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 24A
Current - Collector Pulsed (Icm) 96A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 12A
Maximum Power 104W
Switching Energy 380μJ (on), 900μJ (off)
Input Type Standard
Gate Charge 48nC
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220-3
Family Part Number HGTP12N60
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1180378-HGTP12N60C3
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Motor Drive & Control, Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian HGTP12N60C3 CAD Model

Description

The ON Semiconductor HGTP12N60C3 is a high-performance N-Channel IGBT (Insulated Gate Bipolar Transistor) designed to deliver efficient and reliable power control in a wide range of applications. This IGBT is well-suited for use in motor drives, inverters, UPS systems, and power management solutions that require high-speed switching, robust performance, and energy efficiency.

Key Features

  • High Voltage Capability: The HGTP12N60C3 is rated for a collector-emitter voltage (Vce) of 600V, making it suitable for high voltage applications.
  • High Current Rating: With a continuous collector current (Ic) rating of 24A, this IGBT can handle significant power levels, making it ideal for demanding electrical environments.
  • Low On-State Voltage: The device has a low on-state voltage (Vce(sat)) of typically 2.3V, which reduces conduction losses and improves overall efficiency.
  • Fast Switching Speed: Its fast switching capabilities minimize switching losses and enhance performance in high-frequency circuits.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged free-wheeling diode provides additional protection against reverse voltage transients and reduces component count in circuit design.

Applications

  • AC and DC motor drives
  • Power inverters and converters
  • Uninterruptible Power Supplies (UPS)
  • Switching power supplies
  • Inductive heating and welding equipment

Advanced Technology and Reliability

The HGTP12N60C3 utilizes ON Semiconductor's proprietary IGBT technology, which combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. This results in a device that provides superior electrical performance with lower gate charge and reduced thermal impedance. The robust package design ensures reliable operation even under extreme conditions.

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and quality. The HGTP12N60C3 is manufactured under strict standards to ensure that it meets the latest environmental regulations, including RoHS and REACH compliance. Additionally, the product is backed by ON Semiconductor's commitment to quality, providing customers with a reliable and high-performing solution for their power management needs.

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