The FQU2N50BTU from ON Semiconductor is a high-performance, N-Channel QFET® MOSFET that offers excellent power switching efficiency and reliability. It is designed to address a wide range of power applications, making it a versatile component in modern electronic systems.

Key Features

• Voltage Rating: The device boasts a drain-source voltage (V_DS) of 500V, which makes it suitable for high voltage applications.
• Current Capacity: It can handle a continuous drain current (I_D) of up to 1.9A, allowing it to drive moderate loads.
• Low On-Resistance: With an on-resistance (R_DS(on)) of 5.5 Ohms, it provides efficient conduction when in the ON state.
• High-Speed Switching: The FQU2N50BTU is capable of fast switching speeds, which is crucial for reducing switching losses in power converters and inverters.
• TO-251 Package: Housed in a through-hole TO-251 package, it offers a compact solution with good thermal performance.

Applications

This MOSFET is ideal for a range of applications where high voltage and power efficiency are essential. It is commonly used in:

• Power Supply Circuits
• Pulse Width Modulated (PWM) Controls
• DC/DC Converters
• Motor Control Systems
• Lighting Systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the FQU2N50BTU is no exception. It is manufactured to meet high standards for performance and reliability, ensuring long service life and consistent operation under varying conditions.

Environmental Compliance

The device is RoHS compliant, meaning it adheres to strict European Union standards by avoiding the use of hazardous substances. This compliance ensures that the FQU2N50BTU is suitable for use in environmentally sensitive applications and contributes to global efforts in reducing electronic waste and toxicity.