The FQPF9N90C is a high-performance, QFET® MOSFET produced by ON Semiconductor, a leading supplier in the semiconductor industry. This power MOSFET is designed to deliver efficient power conversion with low on-state resistance and high blocking voltage, making it suitable for a wide array of applications, including power supply, lighting, and motor drive applications.
Key Features
- High Voltage Tolerance: With a drain-source voltage (VDS) of 900V, the FQPF9N90C is capable of handling high voltage applications, ensuring reliability and robustness in demanding situations.
- Low On-Resistance: The device boasts a low on-state resistance (RDS(on)) of 1.5 Ω, which minimizes conduction losses and improves overall efficiency.
- Fast Switching: The FQPF9N90C offers fast switching speeds, which are essential for reducing switching losses and improving performance in high-frequency power conversion systems.
- High Current Capability: This MOSFET can support a continuous drain current (ID) of up to 9 A, making it suitable for high current applications.
- Extended Safe Operating Area: It features an extended safe operating area (SOA) which is crucial for reliable operation under varied conditions.
Applications
The FQPF9N90C is versatile and can be used in various applications, such as:
- Power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- Power inverters
- Lighting systems, including LED drivers
- Industrial power applications, including motor drives and welding equipment
Quality and Reliability
ON Semiconductor is committed to delivering high-quality products. The FQPF9N90C is no exception, as it is designed to meet rigorous standards of performance and reliability. It is RoHS compliant and backed by ON Semiconductor's commitment to environmental sustainability and quality assurance.
With its combination of high voltage capability, low on-resistance, fast switching, and high current handling, the FQPF9N90C is an excellent choice for designers looking to optimize their power management systems for both performance and efficiency.