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FQPF8N60C

Part No FQPF8N60C
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 600V N-Channel MOSFET | MOSFET N-CH 600V 7.5A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 7.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1255pF at 25V
Power Dissipation (Maximum) 48W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1175496-FQPF8N60C
Manufacturer Homepage www.fairchildsemi.com
Family Name FQPF8N60
Introduction Date May 15, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF8N60C CAD Model

Description

ON Semiconductor FQPF8N60C N-Channel QFET® MOSFET

The FQPF8N60C from ON Semiconductor is a high-performance N-Channel QFET® MOSFET designed to deliver efficient power management and switching. This MOSFET utilizes advanced QFET® technology to provide superior switching performance and high avalanche energy strength. It is a suitable component for a wide range of applications, including power supplies, converters, inverters, and motor control systems.

This device features a drain-source voltage (VDS) of 600V, which makes it an excellent choice for systems that require high voltage operation. The continuous drain current (ID) at 25°C is rated at 7.5A, ensuring that it can handle significant loads without overheating. The FQPF8N60C also boasts a low on-state resistance (RDS(on)) of 1.2Ω, which contributes to its high efficiency by minimizing power loss during operation.

The FQPF8N60C is also designed with a fast switching speed, which is crucial for reducing switching losses and improving overall system efficiency. The total gate charge (Qg) is optimized to provide a good balance between switching speed and gate drive requirements. Additionally, the device features a maximum power dissipation of 62.5W, allowing it to handle significant power levels.

ON Semiconductor has equipped the FQPF8N60C with robust internal protection features. It has an integrated avalanche ruggedness, which means it can safely absorb high-energy pulses without damage. This makes it reliable for applications that may experience unexpected voltage spikes.

The FQPF8N60C comes in a TO-220F package, which is known for its ease of mounting and good thermal performance. This package allows for efficient heat dissipation, contributing to the device's stability and longevity.

In summary, the ON Semiconductor FQPF8N60C is a versatile and reliable MOSFET that offers high voltage capability, robust performance, and efficient power management for a variety of electronic applications. Its combination of advanced features ensures that it can meet the demanding requirements of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,820 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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