The FQP6N90 from ON Semiconductor is a cutting-edge power MOSFET designed to deliver high performance for a wide range of applications. This component is a part of ON Semiconductor's FET portfolio, renowned for their efficiency and reliability. The FQP6N90 is tailored to meet the stringent requirements of modern electronic circuits, providing both designers and engineers with a robust and versatile solution.

Key Features

• Voltage: The FQP6N90 operates at a drain-source voltage (V<sub>DS) of 900V, making it suitable for high voltage applications.
• Current: It offers a continuous drain current (I<sub>D) of 6A, ensuring adequate current handling capabilities for a variety of uses.
• R<sub>DS(on): This MOSFET features a low on-state resistance of 1.25Ω, minimizing power losses and improving efficiency.
• High-Speed Switching: Designed for high-speed switching applications, the FQP6N90 can switch on and off rapidly, reducing transition losses.
• Temperature: It is operational over a wide temperature range, making it reliable in extreme conditions.

Applications

The versatility of the FQP6N90 MOSFET makes it ideal for a broad range of applications, including:

• Power supply units
• DC-DC converters
• Motor drives
• Lighting systems
• High voltage switching circuits

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the FQP6N90 is no exception. It is manufactured using robust and high-performance technology, ensuring that it meets the rigorous demands of industrial and commercial applications. With its robust design, this MOSFET is built to deliver long-term performance and stability.

Environmental Compliance

The FQP6N90 is compliant with RoHS (Restriction of Hazardous Substances) directives, indicating that it is free from harmful substances such as lead, mercury, and cadmium. This compliance ensures that the product is environmentally friendly and suitable for use in a wide range of markets, including those with strict environmental regulations.