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FQD9N25TM-SBEK002

Part No FQD9N25TM-SBEK002
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description LDO REGULATOR, ULTRA-LOW NOISE,  /  N-Channel 250 V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-FQD9N25TM-SBEK002TR
Standard Package 3,000
Win Source Part Number 968554-FQD9N25TM-SBEK002
Ultra Librarian 3D Model Ultra Librarian FQD9N25TM-SBEK002 CAD Model

Description

The ON Semiconductor FQD9N25TM-SBEK002 represents a high-performance, N-channel QFET® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This device is engineered to combine low on-state resistance (R<sub>DS(on)) with a high blocking voltage, making it an excellent choice for high-efficiency power supplies, motor controls, and other power-intensive applications.

Key Features

  • Low R<sub>DS(on): This MOSFET boasts an impressively low on-state resistance, which minimizes conduction losses and improves overall efficiency.
  • High Drain-Source Voltage (V<sub>DSS): With a V<sub>DSS of 250V, the FQD9N25TM-SBEK002 can handle high voltage applications with ease.
  • High Continuous Drain Current (I<sub>D): A robust continuous drain current rating ensures that the device can support a significant amount of current without overheating or degrading performance.
  • Fast Switching Speed: The MOSFET is designed for applications requiring fast switching, which helps reduce switching losses and increases efficiency in high-frequency circuits.
  • Thermal Management: Enhanced thermal characteristics allow for better heat dissipation, ensuring the device operates within safe temperature limits under high-load conditions.

Applications

The versatility of the FQD9N25TM-SBEK002 makes it suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverter Systems
  • DC-DC Converters
  • Motor Drives and Controls
  • LED Lighting
  • Uninterruptible Power Supplies (UPS)

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the FQD9N25TM-SBEK002 is no exception. It is built to meet stringent industry standards, ensuring long-term performance and reliability across a range of environmental conditions.

Environmental Compliance

The FQD9N25TM-SBEK002 is compliant with RoHS (Restriction of Hazardous Substances) directives, making it an environmentally friendly choice for manufacturers looking to create green products.

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