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FQD4P25TM

Part No FQD4P25TM
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 250V P-Channel MOSFET | MOSFET P-CH 250V 3.1A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 3.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.1Ohm at 1.55A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 420pF at 25V
Power Dissipation (Maximum) 2.5W, 45W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1175342-FQD4P25TM
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQD4P25TM CAD Model

Description

ON Semiconductor FQD4P25TM MOSFET Overview

The FQD4P25TM from ON Semiconductor is a high-performance P-Channel QFET® MOSFET designed to offer efficient power management in a wide range of applications. This semiconductor device is especially suitable for scenarios that require low on-resistance and high switching performance. With its advanced technology, the FQD4P25TM is an ideal choice for power conversion and regulation tasks in modern electronic circuits.

Key Features

  • Voltage Rating: The FQD4P25TM boasts a drain-source voltage (V<sub>DS) of -250V, making it well-suited for high voltage applications.
  • Current Capacity: It can handle a continuous drain current (I<sub>D) of -4.4A, ensuring reliable operation under substantial load conditions.
  • Low R<sub>DS(on): The device features a low on-state resistance of typically 1.35Ω at V<sub>GS = -10V, contributing to its efficiency by minimizing power loss during operation.
  • Fast Switching: Fast switching speeds are provided by the optimized gate charge, which enhances the overall performance of power conversion systems.
  • Package: Encased in a compact DPAK (TO-252) package, the FQD4P25TM is designed for space-efficient PCB layouts and easy integration into various electronic assemblies.
  • Thermal Performance: The device is characterized by excellent thermal performance, ensuring stability and reliability even under high temperature conditions.

Applications

The FQD4P25TM is versatile and can be used in a variety of applications, including:

  • Power supply converters
  • DC/DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • Power management in portable devices

With its robust design and advanced manufacturing process, the FQD4P25TM MOSFET from ON Semiconductor is engineered to meet the demands of modern electronic devices that require high efficiency, reliability, and power density. Whether in industrial, automotive, or consumer electronics, this MOSFET is an excellent choice for designers looking to optimize their power management solutions.

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Quantity Unit Price Ext. Price
19+ $3.1721 $60.2699
45+ $2.6028 $117.1260
69+ $2.5215 $173.9835
95+ $2.4402 $231.8190
123+ $2.3587 $290.1201
164+ $2.1148 $346.8272
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