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FQAF8N80

Part No FQAF8N80
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 800V N-Channel MOSFET | MOSFET N-CH 800V 5.9A TO-3PF
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 5.9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 2.95A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 57nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2350pF at 25V
Power Dissipation (Maximum) 107W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3PF
Manufacturer Package TO-3P-3 Full Pack
Manufacturer Pack Quantity 360
MSL Level 1 (Unlimited)
Win Source Part Number 1175198-FQAF8N80
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQAF8N80 CAD Model

Description

The ON Semiconductor FQAF8N80 is a high-performance, N-channel QFET® MOSFET designed to deliver efficient power management and conversion in a variety of applications. This device offers a robust and energy-efficient solution for engineers looking to optimize their power systems.

Key Features

  • High Voltage Capability: With an 800V drain-source breakdown voltage (VDSS), the FQAF8N80 is well-suited for high-voltage applications, providing a wide safety margin for electrical equipment.
  • Low On-Resistance: The low on-state resistance (RDS(on)) minimizes conduction losses, enhancing overall system efficiency and reducing heat generation.
  • Fast Switching: The MOSFET's fast switching speed improves performance in switching applications, contributing to lower switching losses and better power conversion efficiency.
  • Robust Thermal Performance: The FQAF8N80's excellent thermal characteristics ensure reliable operation even under high temperature conditions, extending the lifespan of the device.
  • Enhanced Gate Charge: The optimized gate charge (QG) allows for reduced driving power, which is crucial for conserving energy in power-sensitive designs.

Applications

The versatility of the FQAF8N80 makes it an ideal choice for a range of applications, including:

  • Power supplies
  • LED lighting systems
  • High-voltage inverters
  • Motor drives
  • Power factor correction (PFC) circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the FQAF8N80 is no exception. Manufactured to meet the highest industry standards, this MOSFET ensures reliable performance and longevity in the most demanding conditions. It is a testament to ON Semiconductor's dedication to providing components that engineers can trust for their critical designs.

Conclusion

The FQAF8N80 from ON Semiconductor is a powerful and reliable component that offers a blend of high voltage capability, low on-resistance, fast switching, and robust thermal performance. Whether you're developing power supplies or integrating power management into sophisticated electronic systems, the FQAF8N80 is designed to meet your needs with efficiency and reliability.

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