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FQA10N80

Part No FQA10N80
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 800V N-Channel MOSFET | MOSFET N-CH 800V 9.8A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 9.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.05Ohm at 4.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 71nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2700pF at 25V
Power Dissipation (Maximum) 240W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3P
Manufacturer Package TO-3P-3, SC-65-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1175147-FQA10N80
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA10N80 CAD Model

Description

Product Overview: FQA10N80 from ON Semiconductor

The FQA10N80 is a high-performance, N-channel QFET® MOSFET produced by ON Semiconductor, a leading provider of semiconductor-based solutions. This power MOSFET is designed to deliver efficient power conversion with a drain-source voltage (V<sub>DS) of 800V and a continuous drain current (I<sub>D) of 10A, making it well-suited for a variety of demanding applications.

With its advanced silicon technology, the FQA10N80 offers an optimal balance between on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), which enhances its overall efficiency and thermal performance. The device features a low gate charge and a low Crss (reverse transfer capacitance), which are critical for high-speed switching applications.

Key Features

  • High Voltage Capability: The FQA10N80 is rated for an 800V drain-source voltage, making it ideal for high-voltage applications.
  • High Current Handling: With a continuous drain current of 10A, it can efficiently handle significant power levels.
  • Low On-Resistance: A low R<sub>DS(on) minimizes conduction losses and improves overall device efficiency.
  • Fast Switching Performance: The low gate charge and reverse transfer capacitance enable rapid switching, reducing switching losses.
  • Robust Design: The device is designed to withstand rigorous operating conditions and offers a high degree of reliability.

Applications

The FQA10N80 is versatile and can be used in a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Electronic Lamp Ballasts
  • DC-DC converters
  • Welding equipment
  • Uninterruptible Power Supplies (UPS)

ON Semiconductor's FQA10N80 is RoHS compliant and is designed with the environment in mind, meeting current regulations for hazardous substances. Its robust package is engineered to provide excellent thermal characteristics, ensuring reliability and longevity in operation.

With its combination of high-voltage capability, efficiency, and fast-switching performance, the FQA10N80 from ON Semiconductor is an excellent choice for designers looking to enhance power management in their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,200 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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