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FGY160T65SPD-F085

Part No FGY160T65SPD-F085
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 650V FS GEN3 TRENCH IGBT / IGBT Trench Field Stop 650 V 240 A 882 W Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 240 A
Current - Collector Pulsed (Icm) 480 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 160A
Power - Max 882 W
Switching Energy 12.4mJ (on), 5.7mJ (off)
Input Type Standard
Td (on/off) @ 25°C 53ns/98ns
Test Condition 400V, 160A, 15V
Reverse Recovery Time (trr) 132 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
Base Product Number FGY160
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FGY160T65SPD_F085-ND,FGY160T65SPD_F085
Standard Package 30
Win Source Part Number 1325545-FGY160T65SPD-F085
Ultra Librarian 3D Model Ultra Librarian FGY160T65SPD-F085 CAD Model

Description

ON Semiconductor FGY160T65SPD-F085: A Robust IGBT Solution

The FGY160T65SPD-F085 is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) from ON Semiconductor, designed to cater to the demanding needs of high-power switching applications. This semiconductor device is engineered to deliver exceptional performance with a focus on efficiency, reliability, and thermal stability.

Key Features

  • High Current Capability: With a collector current rating of 160A, the FGY160T65SPD-F085 is capable of handling high-power applications with ease.
  • High Voltage Rating: The device supports a maximum collector-emitter voltage of 650V, making it suitable for a wide range of industrial and commercial power systems.
  • Low On-State Voltage: The IGBT is designed to have a low VCE(ON) to minimize conduction losses and improve overall efficiency.
  • Fast Switching Speed: Fast switching characteristics ensure reduced switching losses and better performance in applications requiring high-frequency operation.
  • Robustness: The device features a rugged design that can withstand harsh conditions, including a high short-circuit withstand time.
  • Co-Packaged Diode: Comes with a co-packaged Free Wheeling Diode (FWD) that provides efficient reverse recovery characteristics.

Applications

The FGY160T65SPD-F085 is ideal for a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Induction Heating
  • Renewable Energy Inverters
  • Power Factor Correction (PFC) Circuits

Product Advantages

ON Semiconductor's FGY160T65SPD-F085 IGBT provides significant advantages for designers looking for a balance between performance and cost-efficiency. Its high current and voltage ratings, combined with low on-state voltage and fast switching, make it a compelling choice for power electronic systems. Additionally, the robustness and integrated diode offer convenience and reliability, ensuring a long operational life and reduced system complexity.

With its superior characteristics, the FGY160T65SPD-F085 from ON Semiconductor stands out as a powerful and reliable component for modern power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.7945 $54.3560
18+ $5.5750 $100.3500
28+ $5.4008 $151.2224
39+ $5.2266 $203.8374
50+ $5.0524 $252.6200
67+ $4.5297 $303.4899
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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