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FGH75T65UPD-F155

Part No FGH75T65UPD-F155
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 650V,75A FIELD STOP TRENCH IGBT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features IGBT Trench Field Stop 650 V 150 A 375 W Through Hole TO-247
Manufacturer ON Semiconductor
Package Tube
Part Status Not For New Designs
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247
Family Name FGH75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FGH75T65UPD_F155, FGH75T65UPD_F155-ND
Quantity per package 450
Popularity High
Supply and Demand Status Balance
Win Source Part Number 919100-FGH75T65UPD-F155
Ultra Librarian 3D Model Ultra Librarian FGH75T65UPD-F155 CAD Model

Description

The FGH75T65UPD-F155 is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a leader in semiconductor solutions. This high-performance IGBT is designed to meet the rigorous demands of modern power electronics applications, offering an optimal balance between switching efficiency and robust thermal performance.

With a collector-emitter voltage (Vce) of 650V and a continuous collector current (Ic) rating of 75A at 25°C, this IGBT is capable of handling high power applications with ease. Its high-speed switching capabilities make it an excellent choice for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and other energy-efficient power conversion systems.

The FGH75T65UPD-F155 incorporates ON Semiconductor's proprietary Field Stop Trench IGBT technology, which provides reduced conduction and switching losses. This technology allows for improved efficiency and thermal management, enabling the device to operate at lower temperatures and extend its overall lifespan.

This IGBT also features a co-packaged fast recovery diode, further enhancing its performance by minimizing the reverse recovery time and reducing electromagnetic interference (EMI). This makes the FGH75T65UPD-F155 a highly reliable component for high-frequency applications.

The device is housed in a TO-247 package, known for its excellent power dissipation characteristics. The package design ensures easy mounting and compatibility with standard heatsinks, facilitating its integration into various circuit designs.

Overall, the FGH75T65UPD-F155 from ON Semiconductor is a powerful IGBT that offers a remarkable combination of high efficiency, fast switching, and robust thermal performance. Its advanced features and reliable operation make it a preferred choice for engineers looking to optimize their power management systems for both performance and reliability.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit the ON Semiconductor website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.9851 $55.8808
18+ $5.7314 $103.1652
28+ $5.5523 $155.4644
38+ $5.3732 $204.1816
49+ $5.1941 $254.5109
65+ $4.6568 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 270 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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