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FGA25N120ANTDTU-F109

Part No FGA25N120ANTDTU-F109
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 50A 312W TO3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
IGBT Type NPT and Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A
Power - Max 312 W
Switching Energy 4.1mJ (on), 960µJ (off)
Input Type Standard
Gate Charge 200 nC
Td (on/off) @ 25°C 50ns/190ns
Test Condition 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) 350 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Base Product Number FGA25N120
Standard Package 30 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 848697-FGA25N120ANTDTU-F109
Ultra Librarian 3D Model Ultra Librarian FGA25N120ANTDTU-F109 CAD Model

Description

ON Semiconductor FGA25N120ANTDTU-F109 IGBT

The FGA25N120ANTDTU-F109 is a high-performance IGBT (Insulated Gate Bipolar Transistor) produced by ON Semiconductor, designed for a range of power applications. This IGBT is part of the field stop series, which is renowned for its efficiency in energy conversion and high-speed switching capabilities. The device is tailored to meet the stringent demands of modern electronic circuits and is widely used in applications such as motor drives, inverters, UPS systems, and induction heating systems.

Key Features and Benefits

  • Advanced Field Stop Technology: The use of field stop layers minimizes the conduction and switching losses, which enhances the overall efficiency of the device.
  • High Current Rating: With a continuous collector current (Ic) of 25A and a pulsed collector current capability, this IGBT can handle high power applications with ease.
  • High Voltage Capability: The FGA25N120ANTDTU-F109 can withstand a collector-emitter voltage (Vce) up to 1200V, making it suitable for high voltage circuits.
  • Low Saturation Voltage: The device exhibits a low Vce(sat), which reduces power dissipation and improves efficiency during operation.
  • Fast Switching Speed: It offers fast switching speeds, which is critical for reducing switching losses and improving performance in high-frequency applications.
  • Co-Packaged Free Wheeling Diode: The inclusion of a fast and soft recovery diode ensures that the IGBT can handle the reverse recovery process efficiently, which is essential for reducing electromagnetic interference (EMI) and improving reliability.

Applications

The FGA25N120ANTDTU-F109 is versatile and can be used in various applications that require high efficiency and fast switching. Some common applications include:

  • AC and DC motor drives
  • Renewable energy inverters (solar and wind)
  • Uninterruptible power supplies (UPS)
  • Induction heating systems
  • Power factor correction (PFC) circuits

ON Semiconductor's FGA25N120ANTDTU-F109 IGBT is a robust and reliable choice for designers looking to optimize their power management systems. Its combination of high-speed switching, efficiency, and thermal performance makes it an essential component for advanced power electronic solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5523 $58.2092
9+ $11.9403 $107.4627
13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
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Availability: 1,260 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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