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FFSH5065A

Part No FFSH5065A
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 60A TO247-2 / Diode 650 V 60A Through Hole TO-247-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr onsemi
Package Tube
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 60A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 50 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Capacitance @ Vr, F 2530pF @ 1V, 100kHz
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number FFSH5065
Standard Package 30
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1352163-FFSH5065A
Ultra Librarian 3D Model Ultra Librarian FFSH5065A CAD Model

Description

Introducing the ON Semiconductor FFSH5065A Silicon Carbide (SiC) Schottky Diode

The ON Semiconductor FFSH5065A is a cutting-edge Silicon Carbide (SiC) Schottky diode that is designed to deliver superior efficiency, reliability, and thermal performance in a variety of power applications. This diode is part of ON Semiconductor's high-performance SiC product line and is engineered to meet the demanding requirements of today's high-efficiency energy systems.

Key Features of the FFSH5065A

  • High Blocking Voltage: With a maximum blocking voltage of 650V, the FFSH5065A is well-suited for systems that require high voltage operation, providing a robust solution for power converters and inverters.
  • Low Forward Voltage Drop: The device features a low forward voltage drop, which translates to reduced power losses and improved system efficiency during operation.
  • Zero Reverse Recovery Time: The SiC Schottky diode technology ensures zero reverse recovery time, which minimizes switching losses and enhances the performance of high-frequency power circuits.
  • High-Temperature Operation: Capable of operating at higher junction temperatures compared to traditional silicon diodes, the FFSH5065A offers reliable performance even under extreme conditions.
  • Robust Package: Encapsulated in a TO-247-2 package, the diode ensures excellent heat dissipation and mechanical durability, making it suitable for rugged applications.

Applications

The FFSH5065A is ideal for a broad range of applications that demand high efficiency and reliability, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supplies (UPS)
  • Electric Vehicle (EV) charging stations
  • Photovoltaic (PV) inverters
  • Motor drives and other power conversion systems

Enhancing Your Power Systems with FFSH5065A

By integrating the ON Semiconductor FFSH5065A into your power systems, you can expect not only an increase in operational efficiency but also a reduction in thermal management requirements. This SiC Schottky diode is a testament to ON Semiconductor's commitment to providing advanced power solutions that meet the evolving needs of modern electronic systems. With its superior switching performance and high-temperature resilience, the FFSH5065A is an excellent choice for designers looking to push the boundaries of power density, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.8309 $59.1545
12+ $9.7075 $116.4900
19+ $9.4042 $178.6798
26+ $9.1007 $236.6182
33+ $8.7974 $290.3142
44+ $7.8873 $347.0412
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 135 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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