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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 24A, 42A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.6mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 63nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3940pF at 15V
Power Dissipation (Maximum) 2.5W, 78W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173853-FDMS8670
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDMS8670 CAD Model

Description

ON Semiconductor FDMS8670 Overview

The FDMS8670 is a high-performance, N-Channel PowerTrench<sup>® MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is optimized for synchronous rectification in DC-DC converters and high-frequency circuits, making it an ideal choice for a range of applications, including computing, telecom, and networking systems.

Key Features

  • Low R<sub>DS(on): The FDMS8670 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: With the ability to handle high levels of continuous and pulsed currents, this MOSFET is suitable for demanding power applications.
  • PowerTrench<sup>® Technology: ON Semiconductor's proprietary PowerTrench<sup>® technology enhances the MOSFET's performance by minimizing gate charge and reducing switching losses, further improving efficiency.
  • Optimized Packaging: The FDMS8670 comes in a compact 8-pin Power 56 package, which offers excellent thermal characteristics and a small footprint on the PCB.

Applications

The versatility of the FDMS8670 allows it to be used in a wide array of applications, including:

  • DC-DC converters for server and telecom power supplies
  • Motor drives and inverters
  • Power management for computing and consumer electronics
  • Synchronous rectification for power factor correction (PFC)

Technical Specifications

Below are some of the technical specifications that detail the performance characteristics of the FDMS8670:

  • V<sub>DS (Drain-Source Voltage): 30V
  • R<sub>DS(on) (Drain-Source On-Resistance): 2.5mΩ at V<sub>GS = 10V
  • I<sub>D (Continuous Drain Current): 80A
  • Q<sub>g (Total Gate Charge): 37nC
  • Operating Temperature Range: -55°C to 150°C

For designers and engineers looking for a reliable and efficient power MOSFET, the FDMS8670 from ON Semiconductor is an excellent choice that combines performance, power efficiency, and versatility in a wide range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.5394 $64.7280
295+ $0.4424 $130.5080
455+ $0.4295 $195.4225
625+ $0.4153 $259.5625
810+ $0.4011 $324.8910
1,080+ $0.3596 $388.3680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 3,400 pieces
MOQ: 120 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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