ON Semiconductor FDMS8670 Overview

The FDMS8670 is a high-performance, N-Channel PowerTrench^® MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is optimized for synchronous rectification in DC-DC converters and high-frequency circuits, making it an ideal choice for a range of applications, including computing, telecom, and networking systems.

Key Features

• Low R_DS(on): The FDMS8670 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
• High Current Capability: With the ability to handle high levels of continuous and pulsed currents, this MOSFET is suitable for demanding power applications.
• PowerTrench^® Technology: ON Semiconductor's proprietary PowerTrench^® technology enhances the MOSFET's performance by minimizing gate charge and reducing switching losses, further improving efficiency.
• Optimized Packaging: The FDMS8670 comes in a compact 8-pin Power 56 package, which offers excellent thermal characteristics and a small footprint on the PCB.

Applications

The versatility of the FDMS8670 allows it to be used in a wide array of applications, including:

• DC-DC converters for server and telecom power supplies
• Motor drives and inverters
• Power management for computing and consumer electronics
• Synchronous rectification for power factor correction (PFC)

Technical Specifications

Below are some of the technical specifications that detail the performance characteristics of the FDMS8670:

• V_DS (Drain-Source Voltage): 30V
• R_DS(on) (Drain-Source On-Resistance): 2.5mΩ at V_GS = 10V
• I_D (Continuous Drain Current): 80A
• Q_g (Total Gate Charge): 37nC
• Operating Temperature Range: -55°C to 150°C

For designers and engineers looking for a reliable and efficient power MOSFET, the FDMS8670 from ON Semiconductor is an excellent choice that combines performance, power efficiency, and versatility in a wide range of power applications.