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FDMS4435BZ

Part No FDMS4435BZ
Manufacturer ON Semiconductor
Catalog FETs - Single
Description P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ | MOSFET P-CH 30V 9A POWER56
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 9A, 18A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 20mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 47nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2050pF at 15V
Power Dissipation (Maximum) 2.5W, 39W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173837-FDMS4435BZ
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDMS4435BZ CAD Model

Description

ON Semiconductor FDMS4435BZ MOSFET Overview

The FDMS4435BZ is a high-performance, PowerTrench® MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to deliver optimal power management and efficiency, making it a perfect choice for a wide range of applications, including DC-DC converters, power supplies, and motor drives.

Key Features

  • Low RDS(on): The FDMS4435BZ boasts an exceptionally low on-resistance, which translates into reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capability: With its ability to handle high currents, this MOSFET is suitable for demanding environments where power density and reliability are critical.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology is engineered to minimize on-state resistance while maintaining superior switching performance, further enhancing the device's efficiency.
  • Optimized Gate Charge: The optimized gate charge of the FDMS4435BZ ensures fast switching speeds, which is essential for high-frequency power switching applications.
  • Single P-Channel: As a P-Channel MOSFET, it allows for simpler drive circuitry compared to N-Channel MOSFETs in certain configurations, such as high-side switching.

Applications

  • DC-DC Converters
  • Power Supply Modules
  • Motor Control Systems
  • Load Switching
  • Battery Management Systems

Reliability and Performance

The FDMS4435BZ is encapsulated in a compact 8-pin Power 56 package that not only saves space but also offers excellent thermal performance. It is rated for operation over a wide temperature range, ensuring reliability and stability in various environmental conditions.

Eco-Friendly

Committed to environmental sustainability, ON Semiconductor ensures that the FDMS4435BZ meets RoHS directives, making it an environmentally friendly choice for manufacturers looking to reduce their ecological footprint.

With its combination of high efficiency, robust performance, and eco-conscious design, the FDMS4435BZ from ON Semiconductor stands out as a superior choice for designers seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0187 $50.9350
120+ $0.8359 $100.3080
190+ $0.8098 $153.8620
260+ $0.7836 $203.7360
335+ $0.7575 $253.7625
445+ $0.6792 $302.2440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,415 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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