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FDMC86160

Part No FDMC86160
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel Power Trench MOSFET 100 V, 43 A, 14 m Ohm | MOSFET N CH 100V 9A POWER33
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 9A, 43A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Maximum) at Id, Vgs 14mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1290pF at 50V
Power Dissipation (Maximum) 2.3W, 54W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package Power33
Manufacturer Package 8-PowerWDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173815-FDMC86160
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDMC86160 CAD Model

Description

ON Semiconductor FDMC86160 PowerTrench® MOSFET

The FDMC86160 is a state-of-the-art N-Channel PowerTrench® MOSFET designed and manufactured by ON Semiconductor. This highly efficient power MOSFET is optimized for power switching applications, offering a perfect blend of low on-resistance and low gate charge, resulting in outstanding performance in power management tasks. With its advanced technology, the FDMC86160 is a reliable and robust solution for a wide range of electronic devices.

This device is encapsulated in a compact 8-MLP (5x6) package, which is designed to provide a small footprint while maintaining excellent thermal performance. The FDMC86160 boasts an RDS(on) of just 2.5 mΩ at VGS = 10 V, which significantly reduces conduction losses and improves overall efficiency. The low gate charge (Qg) and capacitance (Ciss) further enhance the device's swift switching capabilities, making it ideal for high-frequency applications.

The FDMC86160 is characterized by its high continuous drain current (ID) of 47 A, which allows it to handle high current loads with ease. It is also noteworthy for its robustness, withstanding a maximum drain-source voltage (VDSS) of 100 V, providing ample headroom for voltage spikes and surges commonly encountered in electronic circuits.

One of the key features of the FDMC86160 is its PowerTrench® technology, which is engineered to minimize on-state resistance while maintaining superior switching performance, thus reducing both static and dynamic power losses. This technology also enhances the device's thermal characteristics, ensuring reliable operation even under high temperature conditions.

ON Semiconductor has equipped the FDMC86160 with ESD protection, ensuring the device's longevity and stability in environments prone to electrostatic discharge. It is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability.

In conclusion, the FDMC86160 from ON Semiconductor is an excellent choice for designers looking for a high-performance, energy-efficient N-Channel MOSFET. Whether it's for power supply applications, DC-DC converters, or motor drives, the FDMC86160 delivers top-notch performance and reliability, making it a valuable component in any power management system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.6937 $51.1803
46+ $2.2103 $101.6738
71+ $2.1412 $152.0252
97+ $2.0721 $200.9937
125+ $2.0031 $250.3875
168+ $1.7958 $301.6944
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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