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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 7A, 36A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 36A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 17nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 25V
Power Dissipation (Maximum) 75W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-252AA
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1173755-FDD26AN06A0
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD26AN06A0 CAD Model

Description

ON Semiconductor FDD26AN06A0 MOSFET

The FDD26AN06A0 is a high-performance N-Channel PowerTrench<sup>® MOSFET designed by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is engineered to deliver optimal power efficiency and reliability for a wide range of applications, including power supplies, DC-DC converters, motor drives, and other demanding power switching applications.

Key Features

  • Low R<sub>DS(on): The FDD26AN06A0 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capability: This device is capable of supporting high continuous drain currents, making it suitable for applications that require robust current handling.
  • Fast Switching Speed: The fast switching characteristics of the FDD26AN06A0 minimize switching losses and allow for high-frequency operation, which is crucial for efficient power management.
  • PowerTrench<sup>® Technology: ON Semiconductor's proprietary PowerTrench<sup>® technology enhances the MOSFET's performance by optimizing the cell structure for reduced gate charge and lower intrinsic capacitance.
  • Thermal Management: With an excellent thermal resistance package, the FDD26AN06A0 ensures reliable operation even under high-temperature conditions.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Inverter Systems
  • Motor Control Circuits
  • Power Management Functions

The FDD26AN06A0 is presented in a robust package that is designed to withstand rigorous conditions while maintaining high performance. Its advanced build quality ensures durability and a long operational lifespan, which is a critical consideration for designers and engineers looking for reliable components.

With its combination of efficiency, power handling, and fast switching capabilities, the FDD26AN06A0 from ON Semiconductor is an excellent choice for those in need of a high-quality, energy-efficient MOSFET for their power circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $1.0235 $66.5275
155+ $0.8398 $130.1690
240+ $0.8136 $195.2640
330+ $0.7872 $259.7760
425+ $0.7610 $323.4250
570+ $0.6822 $388.8540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 7,200 pieces
MOQ: 65 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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