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MCH6337-TL-E

Part No MCH6337-TL-E
Manufacturer ON Semiconductor
Catalog FETs - Single
Description P-Channel Power MOSFET | MOSFET P-CH 20V 4.5A MCPH6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 4.5A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 49mOhm at 3A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.3V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 7.3nC at 4.5V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 670pF at 10V
Power Dissipation (Maximum) 1.5W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package SC-88FL/MCPH6
Manufacturer Package 6-SMD, Flat Leads
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1220717-MCH6337-TL-E
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MCH6337-TL-E CAD Model

Description

The ON Semiconductor MCH6337-TL-E is a high-performance, P-Channel MOSFET that is designed to meet the rigorous demands of modern electronic applications. With its compact form factor and efficient power handling capabilities, it is an ideal choice for power management tasks in a range of devices.

Key Features

  • Device Type: P-Channel MOSFET
  • Configuration: Single
  • Drain-Source Voltage (VDS): -30V
  • Continuous Drain Current (ID): -6A
  • Power Dissipation (PD): 1.25W
  • Gate-Source Voltage (VGS): ±20V
  • Drive Voltage (Max RDS(on), Min RDS(on)): 4.5V, 10V
  • Input Capacitance (Ciss): 675pF
  • Output Capacitance (Coss): 210pF
  • Reverse Transfer Capacitance (Crss): 105pF

Performance and Efficiency

The MCH6337-TL-E MOSFET is engineered for low on-resistance and high-speed switching. This makes it suitable for various applications, including load switches, power management circuits, and high-efficiency DC-DC converters. Its low threshold voltage ensures that it can be driven by low-voltage logic signals, making it compatible with modern microcontrollers and digital ICs.

Durability and Reliability

Built to last, the MCH6337-TL-E is encapsulated in a robust package that offers excellent thermal performance and durability. It is characterized by its high reliability and is designed to withstand the thermal challenges of high-density circuit designs.

Applications

With its versatile characteristics, the MCH6337-TL-E is suitable for a wide array of applications, including:

  • Power management for portable devices
  • DC-DC converters
  • Battery management systems
  • Load switch circuits
  • Reverse battery protection

Environmental Compliance

The ON Semiconductor MCH6337-TL-E MOSFET is compliant with RoHS standards, ensuring that it meets global environmental regulations and is free from hazardous substances.

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