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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 28A, 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.9mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 235nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 12200pF at 25V
Power Dissipation (Maximum) 254W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-263AB
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1173716-FDB8442
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDB8442 CAD Model

Description

The ON Semiconductor FDB8442 is a state-of-the-art N-Channel PowerTrench® MOSFET designed to deliver high performance in power switching applications. This robust component is particularly suited for high-efficiency power supplies, motor controls, and a variety of other applications that demand high-speed switching, low on-resistance, and minimal power loss.

Key Features:

  • Low On-Resistance: The FDB8442 boasts an exceptionally low on-resistance (R<sub>DS(on)) which ensures minimal voltage drop across the device when conducting and leads to increased efficiency in power conversion.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET allows for efficient operation at high frequencies, which is essential for modern power electronic systems.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® technology enhances the overall performance by optimizing the cell structure to minimize on-state resistance and to reduce switching and conduction losses.
  • High Power Dissipation: With an ability to handle a substantial amount of power, the FDB8442 is capable of dissipating heat effectively, which is crucial for maintaining stability and longevity in high-power applications.
  • RoHS Compliant: Complying with the Restriction of Hazardous Substances (RoHS) directive, this MOSFET is environmentally friendly and suitable for use in a wide range of consumer electronics.

Applications:

The versatility of the FDB8442 makes it ideal for numerous applications, including:

  • DC/DC Converters
  • Synchronous Rectification in SMPS (Switched Mode Power Supplies)
  • Power Management Functions
  • Motor Drives and Inverters
  • Battery Management Systems
  • Load Switching

Technical Specifications:

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 40V Continuous Drain Current (I<sub>D) 195A Power Dissipation (P<sub>D) 125W R<sub>DS(on) 2.2mΩ Package TO-263 (D2PAK)

With its robust design and cutting-edge technology, the ON Semiconductor FDB8442 N-Channel PowerTrench® MOSFET is a reliable and efficient solution for a wide range of high-performance power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.8783 $66.2009
55+ $2.3621 $129.9155
85+ $2.2884 $194.5140
117+ $2.2147 $259.1199
152+ $2.1409 $325.4168
203+ $1.9197 $389.6991
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 7,000 pieces
MOQ: 23 pcs
Order Increment : 1 piece
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