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ECH8663R-TL-H

Part No ECH8663R-TL-H
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 8A 8ECH
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 20.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 4.5V
Power - Max 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 8-ECH
Base Product Number ECH8663
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 587949-ECH8663R-TL-H
Ultra Librarian 3D Model Ultra Librarian ECH8663R-TL-H CAD Model

Description

The ECH8663R-TL-H is a state-of-the-art P-Channel Power MOSFET presented by ON Semiconductor, a renowned leader in the semiconductor industry. This high-performance component is designed to cater to a wide range of power management and switching applications, making it a versatile choice for engineers and designers.

Key Features

  • Low On-Resistance: The ECH8663R-TL-H boasts an exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in circuit operation.
  • High-Speed Switching: Engineered for rapid switching, this MOSFET supports high-frequency operations, making it ideal for applications requiring fast switching capabilities.
  • Gate Charge Optimization: The device's gate charge is optimized to balance switching speeds and on-resistance, providing an effective solution for power-efficient designs.
  • Small Footprint: Housed in a compact TSMT6 package, the ECH8663R-TL-H saves valuable board space without compromising performance, suitable for space-constrained applications.
  • Thermal Performance: With its superior thermal characteristics, this MOSFET ensures reliable operation even under higher temperature conditions.

Applications

The ECH8663R-TL-H is well-suited for a variety of applications, including but not limited to:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Drives

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDS) -30 V
Gate-to-Source Voltage (VGS) ±12 V
Continuous Drain Current (ID) -6 A
Power Dissipation (PD) 1.25 W
Operating Temperature Range -55°C to +150°C

In conclusion, the ECH8663R-TL-H from ON Semiconductor is a robust and efficient solution for modern electronic designs requiring P-Channel MOSFETs with high-speed switching, low on-resistance, and compact packaging.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2523 $67.5690
65+ $1.8480 $120.1200
100+ $1.7903 $179.0300
135+ $1.7325 $233.8875
175+ $1.6748 $293.0900
235+ $1.5015 $352.8525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,134 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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